Fluorinated CMOS HfO2 for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF4 Plasma Passivation

Woei Cherng Wu; Chao Sung Lai; Huai Hsien Chiu; Jer Chyi Wang; Pai Chi Chou; Tien Sheng Chao

doi:10.1109/ESSDERC.2010.5618191

Fluorinated CMOS HfO₂ for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF₄ Plasma Passivation

Woei Cherng Wu^*, Chao Sung Lai, Huai Hsien Chiu, Jer Chyi Wang, Pai Chi Chou, Tien Sheng Chao

^*此作品的通信作者

電子工程學系(含學碩博士班)

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Fluorine distribution engineering in HfO₂ to get higher performance (HP EOT=1.2nm) and low stand-by power (LSTP EOT=1.8nm) CMOS device with 48% driving current enhancement for HP, 73% leakage reduction for LSTP were demonstrated. Better uniformity (50% VtU and 9% IdU reduction) and excellent reliability, P/NBTI, of n-/p-MOSFET were achieved A new physical model of fluorine re-incorporation was proposed to explain the turnaround of NBTI and the much improvement of NBTI for HP and LP device.

原文	英語
主出版物標題	2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
頁面	416-419
頁數	4
DOIs	https://doi.org/10.1109/ESSDERC.2010.5618191
出版狀態	已出版 - 2010
事件	2010 European Solid State Device Research Conference, ESSDERC 2010 - Sevilla, 西班牙持續時間: 14 09 2010 → 16 09 2010

出版系列

名字	2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Conference

Conference	2010 European Solid State Device Research Conference, ESSDERC 2010
國家/地區	西班牙
城市	Sevilla
期間	14/09/10 → 16/09/10

存取文件

10.1109/ESSDERC.2010.5618191

其它文件與鏈接

Link to publication in Scopus

引用此

Wu, W. C., Lai, C. S., Chiu, H. H., Wang, J. C., Chou, P. C., & Chao, T. S. (2010). Fluorinated CMOS HfO₂ for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF₄ Plasma Passivation. 於 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010 (頁 416-419). 文章 5618191 (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010). https://doi.org/10.1109/ESSDERC.2010.5618191

Wu, Woei Cherng ; Lai, Chao Sung ; Chiu, Huai Hsien 等. / Fluorinated CMOS HfO₂ for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF₄ Plasma Passivation. 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. 頁 416-419 (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010).

@inproceedings{6389eb7f31734a9aaea9fcaabb18fec4,

title = "Fluorinated CMOS HfO2 for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF4 Plasma Passivation",

abstract = "Fluorine distribution engineering in HfO2 to get higher performance (HP EOT=1.2nm) and low stand-by power (LSTP EOT=1.8nm) CMOS device with 48% driving current enhancement for HP, 73% leakage reduction for LSTP were demonstrated. Better uniformity (50% VtU and 9% IdU reduction) and excellent reliability, P/NBTI, of n-/p-MOSFET were achieved A new physical model of fluorine re-incorporation was proposed to explain the turnaround of NBTI and the much improvement of NBTI for HP and LP device.",

author = "Wu, {Woei Cherng} and Lai, {Chao Sung} and Chiu, {Huai Hsien} and Wang, {Jer Chyi} and Chou, {Pai Chi} and Chao, {Tien Sheng}",

year = "2010",

doi = "10.1109/ESSDERC.2010.5618191",

language = "英语",

isbn = "9781424466610",

series = "2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010",

pages = "416--419",

booktitle = "2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010",

note = "2010 European Solid State Device Research Conference, ESSDERC 2010 ; Conference date: 14-09-2010 Through 16-09-2010",

}

Wu, WC, Lai, CS, Chiu, HH, Wang, JC, Chou, PC & Chao, TS 2010, Fluorinated CMOS HfO₂ for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF₄ Plasma Passivation. 於 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010., 5618191, 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010, 頁 416-419, 2010 European Solid State Device Research Conference, ESSDERC 2010, Sevilla, 西班牙, 14/09/10. https://doi.org/10.1109/ESSDERC.2010.5618191

Fluorinated CMOS HfO₂ for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF₄ Plasma Passivation. / Wu, Woei Cherng; Lai, Chao Sung; Chiu, Huai Hsien 等.
2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 416-419 5618191 (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Fluorinated CMOS HfO2 for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF4 Plasma Passivation

AU - Wu, Woei Cherng

AU - Lai, Chao Sung

AU - Chiu, Huai Hsien

AU - Wang, Jer Chyi

AU - Chou, Pai Chi

AU - Chao, Tien Sheng

PY - 2010

Y1 - 2010

N2 - Fluorine distribution engineering in HfO2 to get higher performance (HP EOT=1.2nm) and low stand-by power (LSTP EOT=1.8nm) CMOS device with 48% driving current enhancement for HP, 73% leakage reduction for LSTP were demonstrated. Better uniformity (50% VtU and 9% IdU reduction) and excellent reliability, P/NBTI, of n-/p-MOSFET were achieved A new physical model of fluorine re-incorporation was proposed to explain the turnaround of NBTI and the much improvement of NBTI for HP and LP device.

AB - Fluorine distribution engineering in HfO2 to get higher performance (HP EOT=1.2nm) and low stand-by power (LSTP EOT=1.8nm) CMOS device with 48% driving current enhancement for HP, 73% leakage reduction for LSTP were demonstrated. Better uniformity (50% VtU and 9% IdU reduction) and excellent reliability, P/NBTI, of n-/p-MOSFET were achieved A new physical model of fluorine re-incorporation was proposed to explain the turnaround of NBTI and the much improvement of NBTI for HP and LP device.

UR - http://www.scopus.com/inward/record.url?scp=78649939240&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2010.5618191

DO - 10.1109/ESSDERC.2010.5618191

M3 - 会议稿件

AN - SCOPUS:78649939240

SN - 9781424466610

T3 - 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

SP - 416

EP - 419

BT - 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

T2 - 2010 European Solid State Device Research Conference, ESSDERC 2010

Y2 - 14 September 2010 through 16 September 2010

ER -

Wu WC, Lai CS, Chiu HH, Wang JC, Chou PC, Chao TS. Fluorinated CMOS HfO₂ for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF₄ Plasma Passivation. 於 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 416-419. 5618191. (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010). doi: 10.1109/ESSDERC.2010.5618191