Fluorinated HfO2 gate dielectrics engineering for CMOS by pre-and post-CF4 plasma passivation

Woei Cherng Wu; Chao Sung Lai; Shih Ching Lee; Ma Ming-Wen; Tien Sheng Chao; Jer Chyi Wang; Chih Wei Hsu; Pai Chi Chou; Jian Hao Chen; Kuo Hsing Kao; Wen Cheng Lo; Tsung Yi Lu; Li Lin Tay; Nelson Rowell

doi:10.1109/IEDM.2008.4796706

Fluorinated HfO₂ gate dielectrics engineering for CMOS by pre-and post-CF₄ plasma passivation

Woei Cherng Wu, Chao Sung Lai^*, Shih Ching Lee, Ma Ming-Wen, Tien Sheng Chao, Jer Chyi Wang, Chih Wei Hsu, Pai Chi Chou, Jian Hao Chen, Kuo Hsing Kao, Wen Cheng Lo, Tsung Yi Lu, Li Lin Tay, Nelson Rowell

^*此作品的通信作者

電子工程學系(含學碩博士班)

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

13 引文斯高帕斯（Scopus）

摘要

In this paper, we demonstrate TaN/Fluorinated HfO₂ CMOS devices, focusing on symmetry and asymmetry fluorine incorporation at top or bottom HfO₂ interfaces. 16% permittivity enhancement, 65% and 91% mobility increases for electron and hole, respectively, under high electric field was achieved. Reliability of n- and p-MOSFET was improved 3 orders and 8% for GIDL and hot carrier immunity, respectively. A physical model of shallow and deep trapping level affected by fluorine was proposed to explain the NBTI and PBTI improvements.

原文	英語
主出版物標題	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796706
出版狀態	已出版 - 2008
事件	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, 美國持續時間: 15 12 2008 → 17 12 2008

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（列印）	0163-1918

Conference

Conference	2008 IEEE International Electron Devices Meeting, IEDM 2008
國家/地區	美國
城市	San Francisco, CA
期間	15/12/08 → 17/12/08

存取文件

10.1109/IEDM.2008.4796706

其它文件與鏈接

Link to publication in Scopus

引用此

Wu, W. C., Lai, C. S., Lee, S. C., Ming-Wen, M., Chao, T. S., Wang, J. C., Hsu, C. W., Chou, P. C., Chen, J. H., Kao, K. H., Lo, W. C., Lu, T. Y., Tay, L. L., & Rowell, N. (2008). Fluorinated HfO₂ gate dielectrics engineering for CMOS by pre-and post-CF₄ plasma passivation. 於 2008 IEEE International Electron Devices Meeting, IEDM 2008 文章 4796706 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796706

@inproceedings{7be8767ed4854c70ac893f2c1a6b5ae6,

title = "Fluorinated HfO2 gate dielectrics engineering for CMOS by pre-and post-CF4 plasma passivation",

abstract = "In this paper, we demonstrate TaN/Fluorinated HfO2 CMOS devices, focusing on symmetry and asymmetry fluorine incorporation at top or bottom HfO2 interfaces. 16% permittivity enhancement, 65% and 91% mobility increases for electron and hole, respectively, under high electric field was achieved. Reliability of n- and p-MOSFET was improved 3 orders and 8% for GIDL and hot carrier immunity, respectively. A physical model of shallow and deep trapping level affected by fluorine was proposed to explain the NBTI and PBTI improvements.",

author = "Wu, {Woei Cherng} and Lai, {Chao Sung} and Lee, {Shih Ching} and Ma Ming-Wen and Chao, {Tien Sheng} and Wang, {Jer Chyi} and Hsu, {Chih Wei} and Chou, {Pai Chi} and Chen, {Jian Hao} and Kao, {Kuo Hsing} and Lo, {Wen Cheng} and Lu, {Tsung Yi} and Tay, {Li Lin} and Nelson Rowell",

year = "2008",

doi = "10.1109/IEDM.2008.4796706",

language = "英语",

isbn = "9781424423781",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

}

Wu, WC, Lai, CS, Lee, SC, Ming-Wen, M, Chao, TS, Wang, JC, Hsu, CW, Chou, PC, Chen, JH, Kao, KH, Lo, WC, Lu, TY, Tay, LL & Rowell, N 2008, Fluorinated HfO₂ gate dielectrics engineering for CMOS by pre-and post-CF₄ plasma passivation. 於 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796706, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, 美國, 15/12/08. https://doi.org/10.1109/IEDM.2008.4796706

TY - GEN

T1 - Fluorinated HfO2 gate dielectrics engineering for CMOS by pre-and post-CF4 plasma passivation

AU - Wu, Woei Cherng

AU - Lai, Chao Sung

AU - Lee, Shih Ching

AU - Ming-Wen, Ma

AU - Chao, Tien Sheng

AU - Wang, Jer Chyi

AU - Hsu, Chih Wei

AU - Chou, Pai Chi

AU - Chen, Jian Hao

AU - Kao, Kuo Hsing

AU - Lo, Wen Cheng

AU - Lu, Tsung Yi

AU - Tay, Li Lin

AU - Rowell, Nelson

PY - 2008

Y1 - 2008

N2 - In this paper, we demonstrate TaN/Fluorinated HfO2 CMOS devices, focusing on symmetry and asymmetry fluorine incorporation at top or bottom HfO2 interfaces. 16% permittivity enhancement, 65% and 91% mobility increases for electron and hole, respectively, under high electric field was achieved. Reliability of n- and p-MOSFET was improved 3 orders and 8% for GIDL and hot carrier immunity, respectively. A physical model of shallow and deep trapping level affected by fluorine was proposed to explain the NBTI and PBTI improvements.

AB - In this paper, we demonstrate TaN/Fluorinated HfO2 CMOS devices, focusing on symmetry and asymmetry fluorine incorporation at top or bottom HfO2 interfaces. 16% permittivity enhancement, 65% and 91% mobility increases for electron and hole, respectively, under high electric field was achieved. Reliability of n- and p-MOSFET was improved 3 orders and 8% for GIDL and hot carrier immunity, respectively. A physical model of shallow and deep trapping level affected by fluorine was proposed to explain the NBTI and PBTI improvements.

UR - http://www.scopus.com/inward/record.url?scp=64549144140&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2008.4796706

DO - 10.1109/IEDM.2008.4796706

M3 - 会议稿件

AN - SCOPUS:64549144140

SN - 9781424423781

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -