Forming-free resistive switching behavior in Nd₂O₃, Dy₂O₃, and Er₂O₃ films fabricated in full room temperature

In this study, we reported the forming-free resistive switching behavior in the Ru/RE₂O₃/TaN (RE Nd, Dy, and Er) memory devices using thin Nd₂O₃, Dy₂O₃, and Er ₂O₃ films fabricated with full room temperature process. The dominant conduction mechanisms of the Ru/RE₂O₃/TaN devices in the low-resistance state and high-resistance state are Ohmic behavior. The Ru/Dy₂O₃/TaN memory device exhibited high resistance ratio, nondestructive readout, reliable data retention, and good endurance. Ru/Dy₂O₃/TaN memory device has a great potential for the application in nonvolatile resistive switching memory.