摘要
This work discusses the temperature-dependent forward current-voltage characteristics of an AlGaInP light-emitting diode. From 300 to 470 K, all curves have the same ideality factor of n=1.58. The temperature-dependent saturation currents are in excellent agreement with the thermal activation behavior over ten decades of current and with an activation energy of Ea =1.405 eV. Based on the discussion of the barrier for forward current flow, n Ea corresponds to the band gap of the active layer. Various mechanisms of current flow for pn junctions and Schottky diodes were examined and verified. Therefore, the n Ea =2.22 eV of the sample corresponds to the band gap of the barriers in the active layer. This value is consistent with the band gap of (Alx Ga1-x) 0.5 In0.5 P for x>0.58.
原文 | 英語 |
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文章編號 | 043706 |
期刊 | Journal of Applied Physics |
卷 | 102 |
發行號 | 4 |
DOIs | |
出版狀態 | 已出版 - 2007 |