Forward current-voltage characteristics of an AlGaInP light-emitting diode

N. C. Chen*, Y. K. Yang, W. C. Lien, C. Y. Tseng

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

13 引文 斯高帕斯(Scopus)

摘要

This work discusses the temperature-dependent forward current-voltage characteristics of an AlGaInP light-emitting diode. From 300 to 470 K, all curves have the same ideality factor of n=1.58. The temperature-dependent saturation currents are in excellent agreement with the thermal activation behavior over ten decades of current and with an activation energy of Ea =1.405 eV. Based on the discussion of the barrier for forward current flow, n Ea corresponds to the band gap of the active layer. Various mechanisms of current flow for pn junctions and Schottky diodes were examined and verified. Therefore, the n Ea =2.22 eV of the sample corresponds to the band gap of the barriers in the active layer. This value is consistent with the band gap of (Alx Ga1-x) 0.5 In0.5 P for x>0.58.

原文英語
文章編號043706
期刊Journal of Applied Physics
102
發行號4
DOIs
出版狀態已出版 - 2007

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