Fully integrated concurrent dual-band low noise amplifier with suspended inductors in SiGe 0.35m BiCMOS technology

Y. T. Lin*, T. Wang, S. S. Lu

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

8 引文 斯高帕斯(Scopus)

摘要

A fully integrated concurrent dual-band low noise amplifier with suspended inductors is reported. Wideband input impedance matching and wideband low noise characteristics are achieved by the proposed capacitive feedback technique simultaneously. Measurement results show input return losses of -12.8 and -11.5dB, voltage gains of 14.4 and 14.3dB, and noise figures of 2.5 and 3.0 measured at 2.3 and 4.5GHz, respectively, with an image rejection ratio of 26.1dB and power consumption of 11.9mW.

原文英語
頁(從 - 到)563-565
頁數3
期刊Electronics Letters
44
發行號9
DOIs
出版狀態已出版 - 2008
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