Functionalization of nanoscaled 2 nm-thick ALD-HfO2 layer by rapid thermal annealing and CF4 plasma for LAPS NH4 + detection

Jung Hsiang Yang; Tseng Fu Lu; Jer Chyi Wang; Dorota G. Pijanswska; Chi Hang Chin; Cheng En Lue; Chia Ming Yang; Chao Sung Lai

doi:10.1109/TRANSDUCERS.2011.5969270

Functionalization of nanoscaled 2 nm-thick ALD-HfO₂ layer by rapid thermal annealing and CF₄ plasma for LAPS NH₄ ⁺ detection

Jung Hsiang Yang, Tseng Fu Lu, Jer Chyi Wang, Dorota G. Pijanswska, Chi Hang Chin, Cheng En Lue, Chia Ming Yang, Chao Sung Lai^*

^*此作品的通信作者

電子工程學系(含學碩博士班)

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

In this work, discussing the detection of NH₄⁺ ion based on LAPS with functionalized 2 nm-thick ALD-HfO₂ film using RTA and CF₄ plasma is demonstrated. The annealing treatment at 500, 700, and 900C were performed on ALD-HfO₂ film and the plasma treatment for 1, 3, and 5 min were performed on ALD-HfO₂ film with 900C annealing. In the results, the response for NH₄⁺ ion detection was decreased with increasing annealing temperature and increased with increasing plasma time. The optimum sensitivity of 37.28mV/pNH₄ was achieved with 900C annealing and 5 min CF₄ plasma.

原文	英語
主出版物標題	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
頁面	2118-2121
頁數	4
DOIs	https://doi.org/10.1109/TRANSDUCERS.2011.5969270
出版狀態	已出版 - 2011
事件	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, 中國持續時間: 05 06 2011 → 09 06 2011

出版系列

名字	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Conference

Conference	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
國家/地區	中國
城市	Beijing
期間	05/06/11 → 09/06/11

存取文件

10.1109/TRANSDUCERS.2011.5969270

其它文件與鏈接

Link to publication in Scopus

引用此

Yang, J. H., Lu, T. F., Wang, J. C., Pijanswska, D. G., Chin, C. H., Lue, C. E., Yang, C. M., & Lai, C. S. (2011). Functionalization of nanoscaled 2 nm-thick ALD-HfO₂ layer by rapid thermal annealing and CF₄ plasma for LAPS NH₄ ⁺ detection. 於 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 (頁 2118-2121). 文章 5969270 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). https://doi.org/10.1109/TRANSDUCERS.2011.5969270

Yang, Jung Hsiang ; Lu, Tseng Fu ; Wang, Jer Chyi 等. / Functionalization of nanoscaled 2 nm-thick ALD-HfO₂ layer by rapid thermal annealing and CF₄ plasma for LAPS NH₄ ⁺ detection. 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. 頁 2118-2121 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

@inproceedings{59556c21efef490b93adb9590d311db4,

title = "Functionalization of nanoscaled 2 nm-thick ALD-HfO2 layer by rapid thermal annealing and CF4 plasma for LAPS NH4 + detection",

abstract = "In this work, discussing the detection of NH4+ ion based on LAPS with functionalized 2 nm-thick ALD-HfO2 film using RTA and CF4 plasma is demonstrated. The annealing treatment at 500, 700, and 900C were performed on ALD-HfO2 film and the plasma treatment for 1, 3, and 5 min were performed on ALD-HfO2 film with 900C annealing. In the results, the response for NH4+ ion detection was decreased with increasing annealing temperature and increased with increasing plasma time. The optimum sensitivity of 37.28mV/pNH4 was achieved with 900C annealing and 5 min CF4 plasma.",

keywords = "ammonium ion (NH), and carbon tetrafluoride (CF) plasma, light addressable potentiometric sensor (LAPS), rapid thermal annealing (RTA)",

author = "Yang, {Jung Hsiang} and Lu, {Tseng Fu} and Wang, {Jer Chyi} and Pijanswska, {Dorota G.} and Chin, {Chi Hang} and Lue, {Cheng En} and Yang, {Chia Ming} and Lai, {Chao Sung}",

year = "2011",

doi = "10.1109/TRANSDUCERS.2011.5969270",

language = "英语",

isbn = "9781457701573",

series = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

pages = "2118--2121",

booktitle = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

note = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 ; Conference date: 05-06-2011 Through 09-06-2011",

}

Yang, JH, Lu, TF, Wang, JC, Pijanswska, DG, Chin, CH, Lue, CE, Yang, CM & Lai, CS 2011, Functionalization of nanoscaled 2 nm-thick ALD-HfO₂ layer by rapid thermal annealing and CF₄ plasma for LAPS NH₄ ⁺ detection. 於 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11., 5969270, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, 頁 2118-2121, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, Beijing, 中國, 05/06/11. https://doi.org/10.1109/TRANSDUCERS.2011.5969270

Functionalization of nanoscaled 2 nm-thick ALD-HfO₂ layer by rapid thermal annealing and CF₄ plasma for LAPS NH₄ ⁺ detection. / Yang, Jung Hsiang; Lu, Tseng Fu; Wang, Jer Chyi 等.
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 2118-2121 5969270 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Functionalization of nanoscaled 2 nm-thick ALD-HfO2 layer by rapid thermal annealing and CF4 plasma for LAPS NH4 + detection

AU - Yang, Jung Hsiang

AU - Lu, Tseng Fu

AU - Wang, Jer Chyi

AU - Pijanswska, Dorota G.

AU - Chin, Chi Hang

AU - Lue, Cheng En

AU - Yang, Chia Ming

AU - Lai, Chao Sung

PY - 2011

Y1 - 2011

N2 - In this work, discussing the detection of NH4+ ion based on LAPS with functionalized 2 nm-thick ALD-HfO2 film using RTA and CF4 plasma is demonstrated. The annealing treatment at 500, 700, and 900C were performed on ALD-HfO2 film and the plasma treatment for 1, 3, and 5 min were performed on ALD-HfO2 film with 900C annealing. In the results, the response for NH4+ ion detection was decreased with increasing annealing temperature and increased with increasing plasma time. The optimum sensitivity of 37.28mV/pNH4 was achieved with 900C annealing and 5 min CF4 plasma.

AB - In this work, discussing the detection of NH4+ ion based on LAPS with functionalized 2 nm-thick ALD-HfO2 film using RTA and CF4 plasma is demonstrated. The annealing treatment at 500, 700, and 900C were performed on ALD-HfO2 film and the plasma treatment for 1, 3, and 5 min were performed on ALD-HfO2 film with 900C annealing. In the results, the response for NH4+ ion detection was decreased with increasing annealing temperature and increased with increasing plasma time. The optimum sensitivity of 37.28mV/pNH4 was achieved with 900C annealing and 5 min CF4 plasma.

KW - ammonium ion (NH)

KW - and carbon tetrafluoride (CF) plasma

KW - light addressable potentiometric sensor (LAPS)

KW - rapid thermal annealing (RTA)

UR - http://www.scopus.com/inward/record.url?scp=80052120110&partnerID=8YFLogxK

U2 - 10.1109/TRANSDUCERS.2011.5969270

DO - 10.1109/TRANSDUCERS.2011.5969270

M3 - 会议稿件

AN - SCOPUS:80052120110

SN - 9781457701573

T3 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

SP - 2118

EP - 2121

BT - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

T2 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Y2 - 5 June 2011 through 9 June 2011

ER -

Yang JH, Lu TF, Wang JC, Pijanswska DG, Chin CH, Lue CE 等. Functionalization of nanoscaled 2 nm-thick ALD-HfO₂ layer by rapid thermal annealing and CF₄ plasma for LAPS NH₄ ⁺ detection. 於 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 2118-2121. 5969270. (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). doi: 10.1109/TRANSDUCERS.2011.5969270