GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates

Vin Cent Su; Po Hsun Chen; Yen Pu Chen; Ming Lun Lee; Yao Hong You; Zheng Hung Hung; Ta Cheng Hsu; Yu Yao Lin; Ray Ming Lin; Chieh Hsiung Kuan

GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates

Vin Cent Su, Po Hsun Chen, Yen Pu Chen, Ming Lun Lee, Yao Hong You, Zheng Hung Hung, Ta Cheng Hsu, Yu Yao Lin, Ray Ming Lin, Chieh Hsiung Kuan^*

^*此作品的通信作者

電子工程學系(含學碩博士班)

研究成果: 期刊稿件 › 會議文章 › 同行評審

摘要

By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.

原文	英語
文章編號	AW1K.3
期刊	Optics InfoBase Conference Papers
出版狀態	已出版 - 2016
事件	CLEO: Applications and Technology, CLEO AT 2016 - San Jose, 美國持續時間: 05 06 2016 → 10 06 2016

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© OSA 2016.

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title = "GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates",

abstract = "By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.",

author = "Su, {Vin Cent} and Chen, {Po Hsun} and Chen, {Yen Pu} and Lee, {Ming Lun} and You, {Yao Hong} and Hung, {Zheng Hung} and Hsu, {Ta Cheng} and Lin, {Yu Yao} and Lin, {Ray Ming} and Kuan, {Chieh Hsiung}",

note = "Publisher Copyright: {\textcopyright} OSA 2016.; CLEO: Applications and Technology, CLEO AT 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

language = "英语",

journal = "Optics InfoBase Conference Papers",

issn = "2162-2701",

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T1 - GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates

AU - Su, Vin Cent

AU - Chen, Po Hsun

AU - Chen, Yen Pu

AU - Lee, Ming Lun

AU - You, Yao Hong

AU - Hung, Zheng Hung

AU - Hsu, Ta Cheng

AU - Lin, Yu Yao

AU - Lin, Ray Ming

AU - Kuan, Chieh Hsiung

PY - 2016

Y1 - 2016

N2 - By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.

AB - By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.

UR - http://www.scopus.com/inward/record.url?scp=85136353414&partnerID=8YFLogxK

M3 - 会议文章

AN - SCOPUS:85136353414

SN - 2162-2701

JO - Optics InfoBase Conference Papers

JF - Optics InfoBase Conference Papers

M1 - AW1K.3

T2 - CLEO: Applications and Technology, CLEO AT 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates

摘要

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