Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures

S. Y. Liao, C. C. Lu, T. Chang, C. F. Huang, C. H. Cheng*, L. B. Chang

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

5 引文 斯高帕斯(Scopus)

摘要

Compared to AlGaN/GaN HEMT with 0.15 μm T-gate length, the AlInN/AlN/GaN one exhibits much higher current density and transconductance of 1558 mA/mm at Vd = 2 V and 330 mS/mm, respectively. The high extrinsic f t and fmax of 82 GHz and 70 GHz are extracted from AlInN/AlN/GaN HEMT. Besides, we find that the transconductance roll-off is significant in AlGaN/GaN, but largely improved in AlInN/AlN/GaN HEMT, suggesting that the high carrier density and lattice-matched epitaxial heterostructure is important to reach both large RF output power and high operation frequency, especially for an aggressively gate length scaling.

原文英語
頁(從 - 到)6243-6246
頁數4
期刊Journal of Nanoscience and Nanotechnology
14
發行號8
DOIs
出版狀態已出版 - 08 2014

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