摘要
Circuit cells for DRAM-style programmable syn- apses and gain-adjustable neurons, which achieve high packing density and hardware annealing, are described. The 8-b accuracy in synapse weights can be achieved in a 0.2-s refresh cycle and the gain-adjustable neurons can be used to apply the hardware annealing technique for efficient searching of the optimal solution.
| 原文 | 英語 |
|---|---|
| 頁(從 - 到) | 1299-1302 |
| 頁數 | 4 |
| 期刊 | IEEE Journal of Solid-State Circuits |
| 卷 | 27 |
| 發行號 | 9 |
| DOIs | |
| 出版狀態 | 已出版 - 09 1992 |
| 對外發佈 | 是 |