High-κ Hf-based charge trapping layer with Al2O 3 blocking oxide for high-density flash memory

S. Maikap; P. J. Tzeng; L. S. Lee; H. Y. Lee; C. C. Wang; P. H. Tsai; K. S. Chang-Liao; W. J. Chen; K. C. Liu; P. R. Jeng; M. J. Tsai

doi:10.1109/VTSA.2006.251055

High-κ Hf-based charge trapping layer with Al₂O ₃ blocking oxide for high-density flash memory

S. Maikap^*, P. J. Tzeng, L. S. Lee, H. Y. Lee, C. C. Wang, P. H. Tsai, K. S. Chang-Liao, W. J. Chen, K. C. Liu, P. R. Jeng, M. J. Tsai

^*此作品的通信作者

電子工程學系(含學碩博士班)

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

6 引文斯高帕斯（Scopus）

摘要

The high-K Hf-based charge trapping layer with Al₂O₃ blocking oxide in metal/Al₂O₃/HfO₂/SiO ₂/silicon (MAHOS) structure is proposed. The Al₂O ₃ as a blocking oxide on high-κ HfO₂ and HfAlO charge trapping layers can improve the program/erase speed and has good retention characteristics, indicating that the MAHOS structure is a promising candidate for future high-speed flash memory. The charge trapping characteristics with different metal gates are also investigated.

原文	英語
主出版物標題	2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers
頁面	36-37
頁數	2
DOIs	https://doi.org/10.1109/VTSA.2006.251055
出版狀態	已出版 - 2006
事件	2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Hsinchu, 台灣持續時間: 24 04 2006 → 26 04 2006

出版系列

名字	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA
國家/地區	台灣
城市	Hsinchu
期間	24/04/06 → 26/04/06

存取文件

10.1109/VTSA.2006.251055

其它文件與鏈接

Link to publication in Scopus

引用此

Maikap, S., Tzeng, P. J., Lee, L. S., Lee, H. Y., Wang, C. C., Tsai, P. H., Chang-Liao, K. S., Chen, W. J., Liu, K. C., Jeng, P. R., & Tsai, M. J. (2006). High-κ Hf-based charge trapping layer with Al₂O ₃ blocking oxide for high-density flash memory. 於 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers (頁 36-37). 文章 4016591 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2006.251055

@inproceedings{6463edd89c18412a869589755b51ba6b,

title = "High-κ Hf-based charge trapping layer with Al2O 3 blocking oxide for high-density flash memory",

abstract = "The high-K Hf-based charge trapping layer with Al2O3 blocking oxide in metal/Al2O3/HfO2/SiO 2/silicon (MAHOS) structure is proposed. The Al2O 3 as a blocking oxide on high-κ HfO2 and HfAlO charge trapping layers can improve the program/erase speed and has good retention characteristics, indicating that the MAHOS structure is a promising candidate for future high-speed flash memory. The charge trapping characteristics with different metal gates are also investigated.",

author = "S. Maikap and Tzeng, {P. J.} and Lee, {L. S.} and Lee, {H. Y.} and Wang, {C. C.} and Tsai, {P. H.} and Chang-Liao, {K. S.} and Chen, {W. J.} and Liu, {K. C.} and Jeng, {P. R.} and Tsai, {M. J.}",

year = "2006",

doi = "10.1109/VTSA.2006.251055",

language = "英语",

isbn = "142440181X",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "36--37",

booktitle = "2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers",

note = "2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA ; Conference date: 24-04-2006 Through 26-04-2006",

}

Maikap, S, Tzeng, PJ, Lee, LS, Lee, HY, Wang, CC, Tsai, PH, Chang-Liao, KS, Chen, WJ, Liu, KC, Jeng, PR & Tsai, MJ 2006, High-κ Hf-based charge trapping layer with Al₂O ₃ blocking oxide for high-density flash memory. 於 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers., 4016591, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 頁 36-37, 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA, Hsinchu, 台灣, 24/04/06. https://doi.org/10.1109/VTSA.2006.251055

High-κ Hf-based charge trapping layer with Al₂O ₃ blocking oxide for high-density flash memory. / Maikap, S.; Tzeng, P. J.; Lee, L. S. 等.
2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers. 2006. p. 36-37 4016591 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - High-κ Hf-based charge trapping layer with Al2O 3 blocking oxide for high-density flash memory

AU - Maikap, S.

AU - Tzeng, P. J.

AU - Lee, L. S.

AU - Lee, H. Y.

AU - Wang, C. C.

AU - Tsai, P. H.

AU - Chang-Liao, K. S.

AU - Chen, W. J.

AU - Liu, K. C.

AU - Jeng, P. R.

AU - Tsai, M. J.

PY - 2006

Y1 - 2006

N2 - The high-K Hf-based charge trapping layer with Al2O3 blocking oxide in metal/Al2O3/HfO2/SiO 2/silicon (MAHOS) structure is proposed. The Al2O 3 as a blocking oxide on high-κ HfO2 and HfAlO charge trapping layers can improve the program/erase speed and has good retention characteristics, indicating that the MAHOS structure is a promising candidate for future high-speed flash memory. The charge trapping characteristics with different metal gates are also investigated.

AB - The high-K Hf-based charge trapping layer with Al2O3 blocking oxide in metal/Al2O3/HfO2/SiO 2/silicon (MAHOS) structure is proposed. The Al2O 3 as a blocking oxide on high-κ HfO2 and HfAlO charge trapping layers can improve the program/erase speed and has good retention characteristics, indicating that the MAHOS structure is a promising candidate for future high-speed flash memory. The charge trapping characteristics with different metal gates are also investigated.

UR - http://www.scopus.com/inward/record.url?scp=34250309223&partnerID=8YFLogxK

U2 - 10.1109/VTSA.2006.251055

DO - 10.1109/VTSA.2006.251055

M3 - 会议稿件

AN - SCOPUS:34250309223

SN - 142440181X

SN - 9781424401819

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 36

EP - 37

BT - 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers

T2 - 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA

Y2 - 24 April 2006 through 26 April 2006

ER -

Maikap S, Tzeng PJ, Lee LS, Lee HY, Wang CC, Tsai PH 等. High-κ Hf-based charge trapping layer with Al₂O ₃ blocking oxide for high-density flash memory. 於 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers. 2006. p. 36-37. 4016591. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2006.251055