摘要
In.53Ga.47As epilayers were grown on InP substrates by the method of liquid phase epitaxy (LPE) with the addition of Pr2O3 into grown melts. The very low background impurity are obtained (approximately 1015 cm-3). Their correspondent mobility also significantly increases from 15321 to 32171 cm2/V-s at 77 K. The low background concentration and high mobility is credited to the gettering effect from the addition of Pr in the growth melt. Furthermore, the In.53Ga.47As Schottky diodes with a barrier height of approximately 0.7 eV is constantly observed, regardless of the utilization of different metals as the Schottky contacts. The high Schottky barrier is attributed to the decrease of the surface states on the surface of the epilayer. The high Schottky barrier is very stable even at high measuring temperature and was repeatedly obtained after four months of exposure to the environment.
原文 | 英語 |
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頁面 | 303-308 |
頁數 | 6 |
出版狀態 | 已出版 - 1997 |
事件 | Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 1 (of 2) - Nis, Yugosl 持續時間: 14 09 1997 → 17 09 1997 |
Conference
Conference | Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 1 (of 2) |
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城市 | Nis, Yugosl |
期間 | 14/09/97 → 17/09/97 |