High barrier Ag, Al, Au, Pt/InGaAs Schottky diodes

H. T. Wang*, L. B. Chang, S. T. Chou, Y. C. Cheng

*此作品的通信作者

研究成果: 會議稿件的類型論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

In.53Ga.47As epilayers were grown on InP substrates by the method of liquid phase epitaxy (LPE) with the addition of Pr2O3 into grown melts. The very low background impurity are obtained (approximately 1015 cm-3). Their correspondent mobility also significantly increases from 15321 to 32171 cm2/V-s at 77 K. The low background concentration and high mobility is credited to the gettering effect from the addition of Pr in the growth melt. Furthermore, the In.53Ga.47As Schottky diodes with a barrier height of approximately 0.7 eV is constantly observed, regardless of the utilization of different metals as the Schottky contacts. The high Schottky barrier is attributed to the decrease of the surface states on the surface of the epilayer. The high Schottky barrier is very stable even at high measuring temperature and was repeatedly obtained after four months of exposure to the environment.

原文英語
頁面303-308
頁數6
出版狀態已出版 - 1997
事件Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 1 (of 2) - Nis, Yugosl
持續時間: 14 09 199717 09 1997

Conference

ConferenceProceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 1 (of 2)
城市Nis, Yugosl
期間14/09/9717/09/97

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