High breakdown voltage enhancement-mode Mg xZn 1-xO thin-film transistor using CF 4 plasma treatment

Hsien Chin Chiu; Hsiang Chun Wang; Che Kai Lin; Hsuan Ling Kao; Jeffrey S. Fu; Kuang Po Hsueh

doi:10.1149/2.004202esl

High breakdown voltage enhancement-mode Mg _xZn _1-xO thin-film transistor using CF ₄ plasma treatment

Hsien Chin Chiu^*, Hsiang Chun Wang, Che Kai Lin, Hsuan Ling Kao, Jeffrey S. Fu, Kuang Po Hsueh

^*此作品的通信作者

電子工程學系(含學碩博士班)

研究成果: 期刊稿件 › 文章 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

In this study, a high breakdown voltage (V _BR) enhancement-mode (E-mode) Mg _xZn _1-xO channel thin-film transistor (TFT) was realized using a gadolinium oxide (Gd ₂O ₃) gate insulator and CF ₄ plasma treatment technologies. The threshold voltage (V _T) for conventional Gd ₂O ₃Mg _xZn _1-xO TFTs was -2.8 V and this value was adjusted to 0.1V after nine minutes of CF ₄ plasma treatment beneath the gate regime. X-ray photoelectron spectroscopy (XPS) results indicated that the fluorine atoms reduced the number of oxygen vacancies in Mg _xZn _1-xO channel, resulting in an extreme low carrier concentration beneath the gate region. Additionally, this E-mode TFT had favorable surface roughness and low interface state density.

原文	英語
頁（從 - 到）	H20-H22
期刊	Electrochemical and Solid-State Letters
卷	15
發行號	2
DOIs	https://doi.org/10.1149/2.004202esl
出版狀態	已出版 - 2012

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10.1149/2.004202esl

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title = "High breakdown voltage enhancement-mode Mg xZn 1-xO thin-film transistor using CF 4 plasma treatment",

abstract = "In this study, a high breakdown voltage (V BR) enhancement-mode (E-mode) Mg xZn 1-xO channel thin-film transistor (TFT) was realized using a gadolinium oxide (Gd 2O 3) gate insulator and CF 4 plasma treatment technologies. The threshold voltage (V T) for conventional Gd 2O 3Mg xZn 1-xO TFTs was -2.8 V and this value was adjusted to 0.1V after nine minutes of CF 4 plasma treatment beneath the gate regime. X-ray photoelectron spectroscopy (XPS) results indicated that the fluorine atoms reduced the number of oxygen vacancies in Mg xZn 1-xO channel, resulting in an extreme low carrier concentration beneath the gate region. Additionally, this E-mode TFT had favorable surface roughness and low interface state density.",

author = "Chiu, {Hsien Chin} and Wang, {Hsiang Chun} and Lin, {Che Kai} and Kao, {Hsuan Ling} and Fu, {Jeffrey S.} and Hsueh, {Kuang Po}",

year = "2012",

doi = "10.1149/2.004202esl",

language = "英语",

volume = "15",

pages = "H20--H22",

journal = "Electrochemical and Solid-State Letters",

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T1 - High breakdown voltage enhancement-mode Mg xZn 1-xO thin-film transistor using CF 4 plasma treatment

AU - Chiu, Hsien Chin

AU - Wang, Hsiang Chun

AU - Lin, Che Kai

AU - Kao, Hsuan Ling

AU - Fu, Jeffrey S.

AU - Hsueh, Kuang Po

PY - 2012

Y1 - 2012

N2 - In this study, a high breakdown voltage (V BR) enhancement-mode (E-mode) Mg xZn 1-xO channel thin-film transistor (TFT) was realized using a gadolinium oxide (Gd 2O 3) gate insulator and CF 4 plasma treatment technologies. The threshold voltage (V T) for conventional Gd 2O 3Mg xZn 1-xO TFTs was -2.8 V and this value was adjusted to 0.1V after nine minutes of CF 4 plasma treatment beneath the gate regime. X-ray photoelectron spectroscopy (XPS) results indicated that the fluorine atoms reduced the number of oxygen vacancies in Mg xZn 1-xO channel, resulting in an extreme low carrier concentration beneath the gate region. Additionally, this E-mode TFT had favorable surface roughness and low interface state density.

AB - In this study, a high breakdown voltage (V BR) enhancement-mode (E-mode) Mg xZn 1-xO channel thin-film transistor (TFT) was realized using a gadolinium oxide (Gd 2O 3) gate insulator and CF 4 plasma treatment technologies. The threshold voltage (V T) for conventional Gd 2O 3Mg xZn 1-xO TFTs was -2.8 V and this value was adjusted to 0.1V after nine minutes of CF 4 plasma treatment beneath the gate regime. X-ray photoelectron spectroscopy (XPS) results indicated that the fluorine atoms reduced the number of oxygen vacancies in Mg xZn 1-xO channel, resulting in an extreme low carrier concentration beneath the gate region. Additionally, this E-mode TFT had favorable surface roughness and low interface state density.

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U2 - 10.1149/2.004202esl

DO - 10.1149/2.004202esl

M3 - 文章

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SN - 1099-0062

VL - 15

SP - H20-H22

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

High breakdown voltage enhancement-mode Mg xZn 1-xO thin-film transistor using CF 4 plasma treatment

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High breakdown voltage enhancement-mode Mg _xZn _1-xO thin-film transistor using CF ₄ plasma treatment