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High electrical performance liquid-phase HBr oxidation gate insulator of InAlAs/InGaAs metamorphic MOS-mHEMT
Hsien Chin Chiu
*
, Chao Hung Chen, Che Kai Lin, Jeffrey S. Fu
*
此作品的通信作者
電子工程學系(含學碩博士班)
Chang Gung University
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Engineering
Liquid Phase
100%
Transistor
100%
Electrical Performance
100%
Oxidation Reaction
100%
Indium Gallium Arsenide
100%
Measurement
50%
Surfaces
50%
Flicker Noise
50%
Plasma
50%
Applications
25%
High Quality
25%
Roughness
25%
Oxide Film
25%
Induced Damage
25%
Atomic Force Microscopy
25%
Surface State
25%
Microwave
25%
Power Added Efficiency
25%
Power Device
25%
Lower Surface
25%
Assisted Chemical Vapor Deposition
25%
Ultraviolet Treatment
25%
Physics
Performance
100%
Oxidation
100%
Liquid Phases
100%
Insulators
100%
High Electron Mobility Transistors
100%
Technology
75%
Quality
25%
Utilization
25%
Surface Roughness
25%
Shapes
25%
Microwave
25%
Atomic Force Microscopy
25%
Low Noise
25%