High-frequency performance of metamorphic InP/In0.53Ga0.47As/InP DHBT in common base configuration on GaAs substrates

Yong Zhong Xiong; Jeffrey S. Fu; Hong Wang; Geok Ing Ng; K. Radhakrishnan

doi:10.1016/S1369-8001(02)00035-5

High-frequency performance of metamorphic InP/In_0.53Ga_0.47As/InP DHBT in common base configuration on GaAs substrates

Yong Zhong Xiong^*, Jeffrey S. Fu, Hong Wang, Geok Ing Ng, K. Radhakrishnan

^*此作品的通信作者

研究成果: 期刊稿件 › 文章 › 同行評審

摘要

In this work, we report the detailed high-frequency noise and power characterization of metamorphic InP double heterojunction bipolar transistors in common base configuration. The noise and power performances were investigated for 5 × 10 μm² device. A minimum noise figure of 2.3 dB with an associated gain of 14.5 dB at 2 GHz, and a maximum output power of 13.0 dBm with a power added efficiency of 47.8% at 2.4 GHz were obtained.

原文	英語
頁（從 - 到）	647-649
頁數	3
期刊	Materials Science in Semiconductor Processing
卷	4
發行號	6
DOIs	https://doi.org/10.1016/S1369-8001(02)00035-5
出版狀態	已出版 - 12 2001
對外發佈	是

存取文件

10.1016/S1369-8001(02)00035-5

其它文件與鏈接

Link to publication in Scopus

引用此

@article{6d208a41e3dd48fab6bfbb69e462af9e,

title = "High-frequency performance of metamorphic InP/In0.53Ga0.47As/InP DHBT in common base configuration on GaAs substrates",

abstract = "In this work, we report the detailed high-frequency noise and power characterization of metamorphic InP double heterojunction bipolar transistors in common base configuration. The noise and power performances were investigated for 5 × 10 μm2 device. A minimum noise figure of 2.3 dB with an associated gain of 14.5 dB at 2 GHz, and a maximum output power of 13.0 dBm with a power added efficiency of 47.8% at 2.4 GHz were obtained.",

author = "Xiong, {Yong Zhong} and Fu, {Jeffrey S.} and Hong Wang and Ng, {Geok Ing} and K. Radhakrishnan",

year = "2001",

month = dec,

doi = "10.1016/S1369-8001(02)00035-5",

language = "英语",

volume = "4",

pages = "647--649",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd",

number = "6",

}

TY - JOUR

T1 - High-frequency performance of metamorphic InP/In0.53Ga0.47As/InP DHBT in common base configuration on GaAs substrates

AU - Xiong, Yong Zhong

AU - Fu, Jeffrey S.

AU - Wang, Hong

AU - Ng, Geok Ing

AU - Radhakrishnan, K.

PY - 2001/12

Y1 - 2001/12

N2 - In this work, we report the detailed high-frequency noise and power characterization of metamorphic InP double heterojunction bipolar transistors in common base configuration. The noise and power performances were investigated for 5 × 10 μm2 device. A minimum noise figure of 2.3 dB with an associated gain of 14.5 dB at 2 GHz, and a maximum output power of 13.0 dBm with a power added efficiency of 47.8% at 2.4 GHz were obtained.

AB - In this work, we report the detailed high-frequency noise and power characterization of metamorphic InP double heterojunction bipolar transistors in common base configuration. The noise and power performances were investigated for 5 × 10 μm2 device. A minimum noise figure of 2.3 dB with an associated gain of 14.5 dB at 2 GHz, and a maximum output power of 13.0 dBm with a power added efficiency of 47.8% at 2.4 GHz were obtained.

UR - http://www.scopus.com/inward/record.url?scp=0035574862&partnerID=8YFLogxK

U2 - 10.1016/S1369-8001(02)00035-5

DO - 10.1016/S1369-8001(02)00035-5

M3 - 文章

AN - SCOPUS:0035574862

SN - 1369-8001

VL - 4

SP - 647

EP - 649

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 6

ER -

High-frequency performance of metamorphic InP/In0.53Ga0.47As/InP DHBT in common base configuration on GaAs substrates

摘要

存取文件

其它文件與鏈接

指紋

引用此

High-frequency performance of metamorphic InP/In_0.53Ga_0.47As/InP DHBT in common base configuration on GaAs substrates