High-k HfxGdyOz charge trapping layer in silicon-oxide-nitride-silicon type nonvolatile memory by in situ radio frequency dual-sputtering method

Pai Chi Chou*, Chao Sung Lai, Jer Chyi Wang, Woei Cherng Wu, Li Chi Liu, Yu Ching Fang, Li Hsu, Hui Chun Wang

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

摘要

In this paper, we propose a novel non-volatile memory (NVM) with a Hf xGdyOz trapping layer prepared by RF dual sputtering for the first time. A higher programming/erasing (P/E) speed and a longer data retention time can be obtained owing to improved trapping ability of HfGdO. Furthermore, in situ RF dual sputtering of HfxGd yOz MHHHS (metal/HfO2/HfxGd yOz/HfO2/Si) is a promising technology for future NVM because of its simplicity and its material compatibility in the semiconductor industry.

原文英語
頁(從 - 到)05DF011-05DF014
期刊Japanese Journal of Applied Physics
48
發行號5 PART 2
DOIs
出版狀態已出版 - 05 2009

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