High-k Tm2O3 sensing membrane-based electrolyte-insulator-semiconductor for pH detection

Tung Ming Pan*, Cheng Da Lee, Min Hsien Wu

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

23 引文 斯高帕斯(Scopus)

摘要

For high-sensitive pH sensing, an electrolyte-insulator-semiconductor (EIS) device with a Tm2O3 sensing membrane fabricated by reactive sputtering and the succeeding postdeposition annealing treatment was proposed. In this study, the influence of thermal annealing (700, 800, and 900 °C) on the structural characteristics of the Tm2O3 sensing membrane was investigated by X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy. The observed structural properties were then correlated with the resulting pH-sensing performance. Results revealed that the EIS device with a Tm2O3 sensing film annealed at 800 °C exhibited a higher sensitivity of 58.02 mV/pH (within the pH range of pH 2-12), a lower hysteresis voltage of 2 mV (measurement cycle, pH = 7→4→7→10→7), and a lower drift rate of 1.04 mV/h (at the condition of pH 7) compared with those at other annealing temperatures. These results are attributed to the formation of a well-crystallized Tm 2O3 structure, a thinner low-k interfacial layer at the oxide/Si interface, and the higher surface roughness at such thermal annealing conditions. As a whole, this study provided some fundamental data regarding the application of Tm2O3 sensing membrane-based EIS devices for pH detection.

原文英語
頁(從 - 到)21937-21940
頁數4
期刊Journal of Physical Chemistry C
113
發行號52
DOIs
出版狀態已出版 - 2009

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