High-performance double-gate α-InGaZnO ISFET pH sensor using a HfO2 gate dielectric

Chih Hung Lu, Tuo Hung Hou, Tung Ming Pan*

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

40 引文 斯高帕斯(Scopus)

摘要

In this paper, we present a high-performance double-gate (DG) amorphous indium-gallium-zinc-oxide (α-InGaZnO) ion-sensitive field-effect transistor (ISFET) using three HfO2 gate dielectric thicknesses as a top gate (TG). The DG structure α-InGaZnO TFTs with a 40-nm TG HfO2 dielectric exhibited a small threshold voltage of 50 mV, a low subthreshold swing of 144.1 mV/decade, and a high ION/IOFF current ratio of 4.5×107. The α-InGaZnO ISFET prepared at the 40-nm HfO2 sensing membrane in the DG mode showed a pH sensitivity of 937 mV/pH, which is far more than the Nernst limit. The hysteresis and drift behaviors of DG ISFET fabricated with the 40-nm condition also showed relatively better chemical stability compared with other conditions.

原文英語
頁(從 - 到)237-242
頁數6
期刊IEEE Transactions on Electron Devices
65
發行號1
DOIs
出版狀態已出版 - 01 2018

文獻附註

Publisher Copyright:
© 2017 IEEE.

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