@inproceedings{946c42c23537442b984aeb5e612e57c8,
title = "High performance gadolinium oxide nanocrystal memory with optimized charge storage and blocking dielectric thickness",
abstract = "The gadolinium oxide nanocrystal (Gd2O3-NCs) memory has been demonstrated with large memory window and good reliabilities. It has been proven that the charges are stored in the crystallized Gd2O 3-NCs which are surrounded by trapping-free amorphous phase of Gd2O3 film. The calculated deep trapping energy level is about 1.7eV below the conduction of the Gd2O3-NCs, and the energy band diagram of the Gd2O3-NCs memory has been proposed. In this study, we optimize the thickness of Gd2O 3 thin film to investigate the effect on the charge storage mechanism. The thickness of Gd2O3 thin film and blocking oxide could simultaneously dominate the operation speed and charge loss phenomenon. Thus, the most suitable film thicknesses for the Gd 2O3-NCs memory were proposed for future mass production nonvolatile memory application.",
keywords = "GdO, Nonvolatile memory and Nanocrystal",
author = "Lin, {Chih Ting} and Chang, {Chi Feng} and Yen, {Yu Ren} and Liao, {Chin Hsiang} and Huang, {Po Wei} and Wang, {Jer Chyi}",
year = "2013",
doi = "10.1109/INEC.2013.6465942",
language = "英语",
isbn = "9781467348416",
series = "Proceedings - Winter Simulation Conference",
pages = "24--26",
booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013",
note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",
}