High-performance poly-silicon TFTs with high-k Y₂O₃ gate dielectrics

Material Science

• Silicon 100%
• Dielectric Material 100%
• Thin-Film Transistor 100%
• Devices 33%
• Annealing 33%
• Temperature 33%
• Density 33%
• Surface 33%
• Electrical Property 33%
• Carrier Mobility 33%
• Gas 33%
• Structural Relaxation 33%

Engineering

• Performance 100%
• Gate Dielectric 100%
• Characteristics 33%
• Density 33%
• Smooth Surface 33%
• Carrier Mobility 33%
• Low-Temperature 33%
• Thermal Annealing 33%
• Si Interface 33%
• Annealing Time 33%
• Current Ratio 33%
• Long Time 33%
• Subthreshold Slope 33%