High-quality native-oxide-free ultra-thin oxide grown by in-situ HF-vapour treatment

C. L. Chen; T. S. Chao; C. S. Lai; T. Y. Huang

doi:10.1049/el:20000693

High-quality native-oxide-free ultra-thin oxide grown by in-situ HF-vapour treatment

C. L. Chen^*
, T. S. Chao
, C. S. Lai
, T. Y. Huang

^*此作品的通信作者

電子工程學系(含學碩博士班)

National Nano Devices Labs.

研究成果: 期刊稿件 › 文章 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A high-quality native-oxide-free ultra-thin gate oxide (2.4-3.2nm) realised by a clustered vertical furnace with in-situ HF-vapour treatment is presented. The gate oxide integrity was significantly improved by using the in-situ HF-vapour treatment prior to gate oxidation.

原文	英語
頁（從 - 到）	981-983
頁數	3
期刊	Electronics Letters
卷	36
發行號	11
DOIs	https://doi.org/10.1049/el:20000693
出版狀態	已出版 - 25 05 2000

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10.1049/el:20000693

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title = "High-quality native-oxide-free ultra-thin oxide grown by in-situ HF-vapour treatment",

abstract = "A high-quality native-oxide-free ultra-thin gate oxide (2.4-3.2nm) realised by a clustered vertical furnace with in-situ HF-vapour treatment is presented. The gate oxide integrity was significantly improved by using the in-situ HF-vapour treatment prior to gate oxidation.",

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AU - Chen, C. L.

AU - Chao, T. S.

AU - Lai, C. S.

AU - Huang, T. Y.

PY - 2000/5/25

Y1 - 2000/5/25

N2 - A high-quality native-oxide-free ultra-thin gate oxide (2.4-3.2nm) realised by a clustered vertical furnace with in-situ HF-vapour treatment is presented. The gate oxide integrity was significantly improved by using the in-situ HF-vapour treatment prior to gate oxidation.

AB - A high-quality native-oxide-free ultra-thin gate oxide (2.4-3.2nm) realised by a clustered vertical furnace with in-situ HF-vapour treatment is presented. The gate oxide integrity was significantly improved by using the in-situ HF-vapour treatment prior to gate oxidation.

UR - https://www.scopus.com/pages/publications/0347947533

U2 - 10.1049/el:20000693

DO - 10.1049/el:20000693

M3 - 文章

AN - SCOPUS:0347947533

SN - 0013-5194

VL - 36

SP - 981

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JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

High-quality native-oxide-free ultra-thin oxide grown by in-situ HF-vapour treatment

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