High quality ultra-thin (2.4nm) oxide prepared by clustered vertical furnace with in-situ HF-vapor pre-gate oxide cleaning

T. S. Chao*, J. L. Chen, C. S. Lai, H. C. Lin, T. Y. Huang

*此作品的通信作者

研究成果: 期刊稿件會議文章同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this paper, we grow and characterize in detail native-oxide-free ultra-thin gate oxide (Tox=2.4nm) by an advance clustered vertical furnace with in-situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of leakage, time-to-breakdown, breakdown field, interface-state-density, stress-induced leakage current, Id, and Gm. In-situ HF-vapor cleaning by a clustered vertical furnace therefore appears to be very promising to grow high-quality native-oxide-free gate oxide for future deep-submicron device application.

原文英語
頁(從 - 到)74-77
頁數4
期刊International Symposium on VLSI Technology, Systems, and Applications, Proceedings
出版狀態已出版 - 1999
對外發佈
事件Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan
持續時間: 07 06 199910 06 1999

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