High quality ultrathin CoTiO3 high-k gate dielectrics

Tung Ming Pan, Tan Fu Lei, Tien Sheng Chao, Kuo Lih Chang, Kuang Chien Hsieh

研究成果: 期刊稿件文章同行評審

14 引文 斯高帕斯(Scopus)

摘要

A novel high-k cobalt-titanium oxide (CoTiO3) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO3Si3N4/Si capacitor structure was fabricated and measured. The effective dielectric constant with buffered layer for CoTiO3 gate dielectric can reach as high as 40 while depicting excellent electrical properties at the same time. This novel metal oxide thus appears to be a promising high-k gate dielectric for future ultralarge scale integrated devices.

原文英語
頁(從 - 到)433-434
頁數2
期刊Electrochemical and Solid-State Letters
3
發行號9
DOIs
出版狀態已出版 - 09 2000
對外發佈

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