High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate

Yu Chun Huang; Hsien Chin Chiu; Hsuan Ling Kao; Hsiang Chun Wang; Chia Hao Liu; Chong Rong Huang; Si Wen Chen

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate

Yu Chun Huang
, Hsien Chin Chiu^*
, Hsuan Ling Kao
, Hsiang Chun Wang
, Chia Hao Liu
, Chong Rong Huang
, Si Wen Chen

^*此作品的通信作者

電子工程學系(含學碩博士班)

Chang Gung University

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

摘要

Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, an SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on low resistivity SiC substrate compared with the traditional Si substrate. The p-GaN HEMTs on SiC substrate possess several advantages, including electrical characteristic and good qualities of epitaxial crystals, especially on temperature performance. Additionally, the price of low resistivity SiC substrate is three times lower than the ordinary SiC substrate.

原文	英語
主出版物標題	CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers
發行者	CS Mantech
頁面	97-100
頁數	4
ISBN（電子）	9781893580312
出版狀態	已出版 - 2021
事件	35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021 - Orlando, Virtual, 美國持續時間: 24 05 2021 → 27 05 2021

出版系列

名字	CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

Conference

Conference	35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021
國家/地區	美國
城市	Orlando, Virtual
期間	24/05/21 → 27/05/21

文獻附註

Publisher Copyright:
© 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.

UN SDG

此研究成果有助於以下永續發展目標

SDG9 工業、創新基礎建設

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Link to publication in Scopus

引用此

Huang, Y. C., Chiu, H. C., Kao, H. L., Wang, H. C., Liu, C. H., Huang, C. R., & Chen, S. W. (2021). High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate. 於 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers (頁 97-100). (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers). CS Mantech.

Huang, Yu Chun ; Chiu, Hsien Chin ; Kao, Hsuan Ling 等. / High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate. CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2021. 頁 97-100 (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

@inproceedings{e15734ace0494be2b514246b5e6f8606,

title = "High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate",

abstract = "Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, an SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on low resistivity SiC substrate compared with the traditional Si substrate. The p-GaN HEMTs on SiC substrate possess several advantages, including electrical characteristic and good qualities of epitaxial crystals, especially on temperature performance. Additionally, the price of low resistivity SiC substrate is three times lower than the ordinary SiC substrate.",

keywords = "Low resistance SiC substrate, Normally off, P-GaN gate HEMT, Temperature",

author = "Huang, \{Yu Chun\} and Chiu, \{Hsien Chin\} and Kao, \{Hsuan Ling\} and Wang, \{Hsiang Chun\} and Liu, \{Chia Hao\} and Huang, \{Chong Rong\} and Chen, \{Si Wen\}",

note = "Publisher Copyright: {\textcopyright} 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.; 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021 ; Conference date: 24-05-2021 Through 27-05-2021",

year = "2021",

language = "英语",

series = "CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

publisher = "CS Mantech",

pages = "97--100",

booktitle = "CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

}

Huang, YC, Chiu, HC , Kao, HL, Wang, HC, Liu, CH, Huang, CR & Chen, SW 2021, High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate. 於 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers, CS Mantech, 頁 97-100, 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021, Orlando, Virtual, 美國, 24/05/21.

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate. / Huang, Yu Chun; Chiu, Hsien Chin ; Kao, Hsuan Ling 等.
CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2021. p. 97-100 (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate

AU - Huang, Yu Chun

AU - Chiu, Hsien Chin

AU - Kao, Hsuan Ling

AU - Wang, Hsiang Chun

AU - Liu, Chia Hao

AU - Huang, Chong Rong

AU - Chen, Si Wen

PY - 2021

Y1 - 2021

N2 - Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, an SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on low resistivity SiC substrate compared with the traditional Si substrate. The p-GaN HEMTs on SiC substrate possess several advantages, including electrical characteristic and good qualities of epitaxial crystals, especially on temperature performance. Additionally, the price of low resistivity SiC substrate is three times lower than the ordinary SiC substrate.

AB - Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, an SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on low resistivity SiC substrate compared with the traditional Si substrate. The p-GaN HEMTs on SiC substrate possess several advantages, including electrical characteristic and good qualities of epitaxial crystals, especially on temperature performance. Additionally, the price of low resistivity SiC substrate is three times lower than the ordinary SiC substrate.

KW - Low resistance SiC substrate

KW - Normally off

KW - P-GaN gate HEMT

KW - Temperature

UR - https://www.scopus.com/pages/publications/85124532990

M3 - 会议稿件

AN - SCOPUS:85124532990

T3 - CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

SP - 97

EP - 100

BT - CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

PB - CS Mantech

T2 - 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021

Y2 - 24 May 2021 through 27 May 2021

ER -

Huang YC, Chiu HC , Kao HL, Wang HC, Liu CH, Huang CR 等. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate. 於 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech. 2021. p. 97-100. (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate

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出版系列

Conference

文獻附註

UN SDG

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