High thermally stable AlGaN/GaN high electron mobility transistors (HEMTs) on bulk semi-insulating GaN substrates

Hao Yu Wang; Hsien Chin Chiu; Chong Rong Huang; Hao Chung Kuo; Sung Wen Huang Chen; Xinke Liu

High thermally stable AlGaN/GaN high electron mobility transistors (HEMTs) on bulk semi-insulating GaN substrates

Hao Yu Wang
, Hsien Chin Chiu^*
, Chong Rong Huang
, Hao Chung Kuo
, Sung Wen Huang Chen
, Xinke Liu

^*此作品的通信作者

電子工程學系(含學碩博士班)

Chang Gung University
National Yang Ming Chiao Tung University
Shenzhen University

研究成果: 會議稿件的類型 › 論文 › 同行評審

摘要

In this study, a AlGaN/GaN high-electron-mobility transistor (HEMT) grown on the bulk GaN substrate was demonstrated and compared against one grown on the SiC substrate. Results of X-ray diffraction and reciprocal space mapping revealed that the bulk GaN substrate structure exhibited less lattice dislocation. The GaN substrate device demonstrated better I_DS–V_GS and gm–V_GS characteristics of I_DS = 700 mA/mm at V_GS = +2 V and gm_max = 148 mS/mm. Compared with the SiC substrate, the current density in the HEMT grown on GaN was improved. The GaN substrate also improved current collapse and dynamic ON-state resistance due to a decrease in the trapping effect. The low-frequency noise and Hooge results also indicated that the GaN substrate had lower lattice dislocation.

原文	英語
出版狀態	已出版 - 2019
事件	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, 美國持續時間: 29 04 2019 → 02 05 2019

Conference

Conference	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
國家/地區	美國
城市	Minneapolis
期間	29/04/19 → 02/05/19

文獻附註

Publisher Copyright:
© 2019 CS Mantech. All rights reserved.

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Link to publication in Scopus

引用此

@conference{769aca8b1f604600aa424e2a8a3ebd6c,

title = "High thermally stable AlGaN/GaN high electron mobility transistors (HEMTs) on bulk semi-insulating GaN substrates",

abstract = "In this study, a AlGaN/GaN high-electron-mobility transistor (HEMT) grown on the bulk GaN substrate was demonstrated and compared against one grown on the SiC substrate. Results of X-ray diffraction and reciprocal space mapping revealed that the bulk GaN substrate structure exhibited less lattice dislocation. The GaN substrate device demonstrated better IDS–VGS and gm–VGS characteristics of IDS = 700 mA/mm at VGS = +2 V and gmmax = 148 mS/mm. Compared with the SiC substrate, the current density in the HEMT grown on GaN was improved. The GaN substrate also improved current collapse and dynamic ON-state resistance due to a decrease in the trapping effect. The low-frequency noise and Hooge results also indicated that the GaN substrate had lower lattice dislocation.",

keywords = "Bulk GaN substrate, Gallium nitride, Microwave device",

author = "Wang, \{Hao Yu\} and Chiu, \{Hsien Chin\} and Huang, \{Chong Rong\} and Kuo, \{Hao Chung\} and Chen, \{Sung Wen Huang\} and Xinke Liu",

note = "Publisher Copyright: {\textcopyright} 2019 CS Mantech. All rights reserved.; 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 ; Conference date: 29-04-2019 Through 02-05-2019",

year = "2019",

language = "英语",

}

High thermally stable AlGaN/GaN high electron mobility transistors (HEMTs) on bulk semi-insulating GaN substrates. / Wang, Hao Yu; Chiu, Hsien Chin; Huang, Chong Rong 等.
2019. 論文發表於 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, 美國.

研究成果: 會議稿件的類型 › 論文 › 同行評審

TY - CONF

T1 - High thermally stable AlGaN/GaN high electron mobility transistors (HEMTs) on bulk semi-insulating GaN substrates

AU - Wang, Hao Yu

AU - Chiu, Hsien Chin

AU - Huang, Chong Rong

AU - Kuo, Hao Chung

AU - Chen, Sung Wen Huang

AU - Liu, Xinke

PY - 2019

Y1 - 2019

N2 - In this study, a AlGaN/GaN high-electron-mobility transistor (HEMT) grown on the bulk GaN substrate was demonstrated and compared against one grown on the SiC substrate. Results of X-ray diffraction and reciprocal space mapping revealed that the bulk GaN substrate structure exhibited less lattice dislocation. The GaN substrate device demonstrated better IDS–VGS and gm–VGS characteristics of IDS = 700 mA/mm at VGS = +2 V and gmmax = 148 mS/mm. Compared with the SiC substrate, the current density in the HEMT grown on GaN was improved. The GaN substrate also improved current collapse and dynamic ON-state resistance due to a decrease in the trapping effect. The low-frequency noise and Hooge results also indicated that the GaN substrate had lower lattice dislocation.

AB - In this study, a AlGaN/GaN high-electron-mobility transistor (HEMT) grown on the bulk GaN substrate was demonstrated and compared against one grown on the SiC substrate. Results of X-ray diffraction and reciprocal space mapping revealed that the bulk GaN substrate structure exhibited less lattice dislocation. The GaN substrate device demonstrated better IDS–VGS and gm–VGS characteristics of IDS = 700 mA/mm at VGS = +2 V and gmmax = 148 mS/mm. Compared with the SiC substrate, the current density in the HEMT grown on GaN was improved. The GaN substrate also improved current collapse and dynamic ON-state resistance due to a decrease in the trapping effect. The low-frequency noise and Hooge results also indicated that the GaN substrate had lower lattice dislocation.

KW - Bulk GaN substrate

KW - Gallium nitride

KW - Microwave device

UR - https://www.scopus.com/pages/publications/85067080233

M3 - 论文

AN - SCOPUS:85067080233

T2 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019

Y2 - 29 April 2019 through 2 May 2019

ER -

High thermally stable AlGaN/GaN high electron mobility transistors (HEMTs) on bulk semi-insulating GaN substrates

摘要

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