Highly sensitivity of potassium ion detection realized on fluorinated-HfO2 by fluorine implantation on EIS

Kuan I. Ho; Tseng Fu Lu; Meng Cin Su; Jer Chyi Wang; Chia Ming Yang; Dorota G. Pijanswska; Chao Sung Lai

doi:10.1109/TRANSDUCERS.2011.5969280

Highly sensitivity of potassium ion detection realized on fluorinated-HfO₂ by fluorine implantation on EIS

Kuan I. Ho, Tseng Fu Lu, Meng Cin Su, Jer Chyi Wang, Chia Ming Yang, Dorota G. Pijanswska, Chao Sung Lai^*

^*此作品的通信作者

電子工程學系(含學碩博士班)

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

In this article, the development of a potassium ion sensor based on the fluorinated-HfO₂ using fluorine (F¹⁹⁺) ion implantation on Electrolyte-Insulator-Semiconductor (EIS) structure is proposed. To concentrate the F atom within a shallow region on HfO₂ sensing membrane surface, relatively low implant power and big tilt angle are chosen. With suitable F¹⁹⁺ implant dosage, the pK sensitivity can be effectively improved from 18.19 to 112 mV/pK, and relatively low drift coefficient of 2.62 mV/h is also achieved in 10 mM potassium electrolyte. To investigate the surface roughness and the fluorine depth profile of the implanted-HfO₂ films, physics analysis including AFM and XPS are both performed.

原文	英語
主出版物標題	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
頁面	2110-2113
頁數	4
DOIs	https://doi.org/10.1109/TRANSDUCERS.2011.5969280
出版狀態	已出版 - 2011
事件	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, 中國持續時間: 05 06 2011 → 09 06 2011

出版系列

名字	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Conference

Conference	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
國家/地區	中國
城市	Beijing
期間	05/06/11 → 09/06/11

存取文件

10.1109/TRANSDUCERS.2011.5969280

其它文件與鏈接

Link to publication in Scopus

引用此

Ho, K. I., Lu, T. F., Su, M. C., Wang, J. C., Yang, C. M., Pijanswska, D. G., & Lai, C. S. (2011). Highly sensitivity of potassium ion detection realized on fluorinated-HfO₂ by fluorine implantation on EIS. 於 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 (頁 2110-2113). 文章 5969280 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). https://doi.org/10.1109/TRANSDUCERS.2011.5969280

Ho, Kuan I. ; Lu, Tseng Fu ; Su, Meng Cin 等. / Highly sensitivity of potassium ion detection realized on fluorinated-HfO₂ by fluorine implantation on EIS. 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. 頁 2110-2113 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

@inproceedings{3951a2f51a464287a988a960fd15b7f2,

title = "Highly sensitivity of potassium ion detection realized on fluorinated-HfO2 by fluorine implantation on EIS",

abstract = "In this article, the development of a potassium ion sensor based on the fluorinated-HfO2 using fluorine (F19+) ion implantation on Electrolyte-Insulator-Semiconductor (EIS) structure is proposed. To concentrate the F atom within a shallow region on HfO2 sensing membrane surface, relatively low implant power and big tilt angle are chosen. With suitable F19+ implant dosage, the pK sensitivity can be effectively improved from 18.19 to 112 mV/pK, and relatively low drift coefficient of 2.62 mV/h is also achieved in 10 mM potassium electrolyte. To investigate the surface roughness and the fluorine depth profile of the implanted-HfO2 films, physics analysis including AFM and XPS are both performed.",

keywords = "Electrolyte-insulator-semiconductor (EIS), fluorine implantation, hafnium dioxide (HfO), hydrogen ion (H), potassium ion (K)",

author = "Ho, {Kuan I.} and Lu, {Tseng Fu} and Su, {Meng Cin} and Wang, {Jer Chyi} and Yang, {Chia Ming} and Pijanswska, {Dorota G.} and Lai, {Chao Sung}",

year = "2011",

doi = "10.1109/TRANSDUCERS.2011.5969280",

language = "英语",

isbn = "9781457701573",

series = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

pages = "2110--2113",

booktitle = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

note = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 ; Conference date: 05-06-2011 Through 09-06-2011",

}

Ho, KI, Lu, TF, Su, MC, Wang, JC , Yang, CM, Pijanswska, DG & Lai, CS 2011, Highly sensitivity of potassium ion detection realized on fluorinated-HfO₂ by fluorine implantation on EIS. 於 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11., 5969280, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, 頁 2110-2113, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, Beijing, 中國, 05/06/11. https://doi.org/10.1109/TRANSDUCERS.2011.5969280

Highly sensitivity of potassium ion detection realized on fluorinated-HfO₂ by fluorine implantation on EIS. / Ho, Kuan I.; Lu, Tseng Fu; Su, Meng Cin 等.
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 2110-2113 5969280 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Highly sensitivity of potassium ion detection realized on fluorinated-HfO2 by fluorine implantation on EIS

AU - Ho, Kuan I.

AU - Lu, Tseng Fu

AU - Su, Meng Cin

AU - Wang, Jer Chyi

AU - Yang, Chia Ming

AU - Pijanswska, Dorota G.

AU - Lai, Chao Sung

PY - 2011

Y1 - 2011

N2 - In this article, the development of a potassium ion sensor based on the fluorinated-HfO2 using fluorine (F19+) ion implantation on Electrolyte-Insulator-Semiconductor (EIS) structure is proposed. To concentrate the F atom within a shallow region on HfO2 sensing membrane surface, relatively low implant power and big tilt angle are chosen. With suitable F19+ implant dosage, the pK sensitivity can be effectively improved from 18.19 to 112 mV/pK, and relatively low drift coefficient of 2.62 mV/h is also achieved in 10 mM potassium electrolyte. To investigate the surface roughness and the fluorine depth profile of the implanted-HfO2 films, physics analysis including AFM and XPS are both performed.

AB - In this article, the development of a potassium ion sensor based on the fluorinated-HfO2 using fluorine (F19+) ion implantation on Electrolyte-Insulator-Semiconductor (EIS) structure is proposed. To concentrate the F atom within a shallow region on HfO2 sensing membrane surface, relatively low implant power and big tilt angle are chosen. With suitable F19+ implant dosage, the pK sensitivity can be effectively improved from 18.19 to 112 mV/pK, and relatively low drift coefficient of 2.62 mV/h is also achieved in 10 mM potassium electrolyte. To investigate the surface roughness and the fluorine depth profile of the implanted-HfO2 films, physics analysis including AFM and XPS are both performed.

KW - Electrolyte-insulator-semiconductor (EIS)

KW - fluorine implantation

KW - hafnium dioxide (HfO)

KW - hydrogen ion (H)

KW - potassium ion (K)

UR - http://www.scopus.com/inward/record.url?scp=80052135134&partnerID=8YFLogxK

U2 - 10.1109/TRANSDUCERS.2011.5969280

DO - 10.1109/TRANSDUCERS.2011.5969280

M3 - 会议稿件

AN - SCOPUS:80052135134

SN - 9781457701573

T3 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

SP - 2110

EP - 2113

BT - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

T2 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Y2 - 5 June 2011 through 9 June 2011

ER -

Ho KI, Lu TF, Su MC, Wang JC , Yang CM, Pijanswska DG 等. Highly sensitivity of potassium ion detection realized on fluorinated-HfO₂ by fluorine implantation on EIS. 於 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 2110-2113. 5969280. (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). doi: 10.1109/TRANSDUCERS.2011.5969280