Impact of high-κ TaOx thickness on the switching mechanism of resistive memory device using IrOx/TaOx/WO x/W structure

A. Prakash; S. Maikap; W. S. Chen; H. Y. Lee; F. T. Chen; M. J. Kao; M. J. Tsai

doi:10.1149/1.3700903

Impact of high-κ TaO_x thickness on the switching mechanism of resistive memory device using IrO_x/TaO_x/WO _x/W structure

A. Prakash^*
, S. Maikap
, W. S. Chen
, H. Y. Lee
, F. T. Chen
, M. J. Kao
, M. J. Tsai

^*此作品的通信作者

電子工程學系(含學碩博士班)

Chang Gung University
Industrial Technology Research Institute of Taiwan

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The impact of switching layer thickness on the resistive memory performance and uniformity has been investigated in a simple stack of IrO _x/TaO_x/W fabricated. The formation of amorphous TaO _x and nanocrystalline WO_x layers are confirmed from HRTEM image. Bipolar resistive switching memory characteristics with small set/reset and large memory window are observed in all devices after electroforming. The observed TaO_x thickness independence of set/reset and low resistance state (LRS) is attributed to the formation of localized nano-filament in TaO_x layer. Cumulative probability plot shows tight distribution of LRS. Good data retention with a large resistance ratio of >10³ at 85°C is obtained.

原文	英語
主出版物標題	Dielectrics for Nanosystems 5
主出版物子標題	Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
發行者	Electrochemical Society Inc.
頁面	379-385
頁數	7
版本	3
ISBN（電子）	9781607683131
ISBN（列印）	9781566779555
DOIs	https://doi.org/10.1149/1.3700903
出版狀態	已出版 - 2012
事件	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, 美國持續時間: 06 05 2012 → 10 05 2012

出版系列

名字	ECS Transactions
號碼	3
卷	45
ISSN（列印）	1938-5862
ISSN（電子）	1938-6737

Conference

Conference	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
國家/地區	美國
城市	Seattle, WA
期間	06/05/12 → 10/05/12

存取文件

10.1149/1.3700903

其它文件與鏈接

Link to publication in Scopus

引用此

Prakash, A., Maikap, S., Chen, W. S., Lee, H. Y., Chen, F. T., Kao, M. J., & Tsai, M. J. (2012). Impact of high-κ TaO_x thickness on the switching mechanism of resistive memory device using IrO_x/TaO_x/WO _x/W structure. 於 Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices (3 編輯, 頁 379-385). (ECS Transactions; 卷 45, 編號 3). Electrochemical Society Inc.. https://doi.org/10.1149/1.3700903

Prakash, A. ; Maikap, S. ; Chen, W. S. 等. / Impact of high-κ TaO_x thickness on the switching mechanism of resistive memory device using IrO_x/TaO_x/WO _x/W structure. Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. 編輯 Electrochemical Society Inc., 2012. 頁 379-385 (ECS Transactions; 3).

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title = "Impact of high-κ TaOx thickness on the switching mechanism of resistive memory device using IrOx/TaOx/WO x/W structure",

abstract = "The impact of switching layer thickness on the resistive memory performance and uniformity has been investigated in a simple stack of IrO x/TaOx/W fabricated. The formation of amorphous TaO x and nanocrystalline WOx layers are confirmed from HRTEM image. Bipolar resistive switching memory characteristics with small set/reset and large memory window are observed in all devices after electroforming. The observed TaOx thickness independence of set/reset and low resistance state (LRS) is attributed to the formation of localized nano-filament in TaOx layer. Cumulative probability plot shows tight distribution of LRS. Good data retention with a large resistance ratio of >103 at 85°C is obtained.",

author = "A. Prakash and S. Maikap and Chen, \{W. S.\} and Lee, \{H. Y.\} and Chen, \{F. T.\} and Kao, \{M. J.\} and Tsai, \{M. J.\}",

year = "2012",

doi = "10.1149/1.3700903",

language = "英语",

isbn = "9781566779555",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

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pages = "379--385",

booktitle = "Dielectrics for Nanosystems 5",

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Prakash, A, Maikap, S, Chen, WS, Lee, HY, Chen, FT, Kao, MJ & Tsai, MJ 2012, Impact of high-κ TaO_x thickness on the switching mechanism of resistive memory device using IrO_x/TaO_x/WO _x/W structure. 於 Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 edn, ECS Transactions, 編號 3, 卷 45, Electrochemical Society Inc., 頁 379-385, 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting, Seattle, WA, 美國, 06/05/12. https://doi.org/10.1149/1.3700903

Impact of high-κ TaO_x thickness on the switching mechanism of resistive memory device using IrO_x/TaO_x/WO _x/W structure. / Prakash, A.; Maikap, S.; Chen, W. S. 等.
Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. 編輯 Electrochemical Society Inc., 2012. p. 379-385 (ECS Transactions; 卷 45, 編號 3).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Impact of high-κ TaOx thickness on the switching mechanism of resistive memory device using IrOx/TaOx/WO x/W structure

AU - Prakash, A.

AU - Maikap, S.

AU - Chen, W. S.

AU - Lee, H. Y.

AU - Chen, F. T.

AU - Kao, M. J.

AU - Tsai, M. J.

PY - 2012

Y1 - 2012

N2 - The impact of switching layer thickness on the resistive memory performance and uniformity has been investigated in a simple stack of IrO x/TaOx/W fabricated. The formation of amorphous TaO x and nanocrystalline WOx layers are confirmed from HRTEM image. Bipolar resistive switching memory characteristics with small set/reset and large memory window are observed in all devices after electroforming. The observed TaOx thickness independence of set/reset and low resistance state (LRS) is attributed to the formation of localized nano-filament in TaOx layer. Cumulative probability plot shows tight distribution of LRS. Good data retention with a large resistance ratio of >103 at 85°C is obtained.

AB - The impact of switching layer thickness on the resistive memory performance and uniformity has been investigated in a simple stack of IrO x/TaOx/W fabricated. The formation of amorphous TaO x and nanocrystalline WOx layers are confirmed from HRTEM image. Bipolar resistive switching memory characteristics with small set/reset and large memory window are observed in all devices after electroforming. The observed TaOx thickness independence of set/reset and low resistance state (LRS) is attributed to the formation of localized nano-filament in TaOx layer. Cumulative probability plot shows tight distribution of LRS. Good data retention with a large resistance ratio of >103 at 85°C is obtained.

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T3 - ECS Transactions

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BT - Dielectrics for Nanosystems 5

PB - Electrochemical Society Inc.

T2 - 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting

Y2 - 6 May 2012 through 10 May 2012

ER -

Prakash A, Maikap S, Chen WS, Lee HY, Chen FT, Kao MJ 等. Impact of high-κ TaO_x thickness on the switching mechanism of resistive memory device using IrO_x/TaO_x/WO _x/W structure. 於 Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 編輯 Electrochemical Society Inc. 2012. p. 379-385. (ECS Transactions; 3). doi: 10.1149/1.3700903