Improved 150°C retention in Hf o.3O o.5N 0.2 memory device with low voltage and fast writing

S. H. Lin; H. J. Yang; H. L. Kao; F. S. Yeh; Albert Chin

doi:10.1109/DRC.2008.4800734

Improved 150°C retention in Hf _o.3O _o.5N _0.2 memory device with low voltage and fast writing

S. H. Lin, H. J. Yang, H. L. Kao, F. S. Yeh, Albert Chin

電子工程學系(含學碩博士班)

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

摘要

At 150°C under a fast 100 μs and low ±9VP/E voltage, the [TaN-Ir ₃Si]-HfAlO-LaAlO ₃-Hf _0.3O _0.5N _0.2-HfAlO-SiO ₂-Si memory device shows good device integrity of a 3.2V initial ΔV _th and 2.4V 10-year extrapolated retention. This only 25% retention decay at 150°C was achieved by double quantum barriers confining trapped carriers in deep Hf _0.3O _0.5N _0.2 well.

原文	英語
主出版物標題	66th DRC Device Research Conference Digest, DRC 2008
頁面	61-62
頁數	2
DOIs	https://doi.org/10.1109/DRC.2008.4800734
出版狀態	已出版 - 2008
事件	66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, 美國持續時間: 23 06 2008 → 25 06 2008

出版系列

名字	Device Research Conference - Conference Digest, DRC
ISSN（列印）	1548-3770

Conference

Conference	66th DRC Device Research Conference Digest, DRC 2008
國家/地區	美國
城市	Santa Barbara, CA
期間	23/06/08 → 25/06/08

存取文件

10.1109/DRC.2008.4800734

其它文件與鏈接

Link to publication in Scopus

引用此

@inproceedings{40a5d86d6a2a4536bf1c3ee90b6e0901,

title = "Improved 150°C retention in Hf o.3O o.5N 0.2 memory device with low voltage and fast writing",

abstract = "At 150°C under a fast 100 μs and low ±9VP/E voltage, the [TaN-Ir 3Si]-HfAlO-LaAlO 3-Hf 0.3O 0.5N 0.2-HfAlO-SiO 2-Si memory device shows good device integrity of a 3.2V initial ΔV th and 2.4V 10-year extrapolated retention. This only 25% retention decay at 150°C was achieved by double quantum barriers confining trapped carriers in deep Hf 0.3O 0.5N 0.2 well.",

author = "Lin, {S. H.} and Yang, {H. J.} and Kao, {H. L.} and Yeh, {F. S.} and Albert Chin",

year = "2008",

doi = "10.1109/DRC.2008.4800734",

language = "英语",

isbn = "9781424419425",

series = "Device Research Conference - Conference Digest, DRC",

pages = "61--62",

booktitle = "66th DRC Device Research Conference Digest, DRC 2008",

note = "66th DRC Device Research Conference Digest, DRC 2008 ; Conference date: 23-06-2008 Through 25-06-2008",

}

Lin, SH, Yang, HJ, Kao, HL, Yeh, FS & Chin, A 2008, Improved 150°C retention in Hf _o.3O _o.5N _0.2 memory device with low voltage and fast writing. 於 66th DRC Device Research Conference Digest, DRC 2008., 4800734, Device Research Conference - Conference Digest, DRC, 頁 61-62, 66th DRC Device Research Conference Digest, DRC 2008, Santa Barbara, CA, 美國, 23/06/08. https://doi.org/10.1109/DRC.2008.4800734

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T1 - Improved 150°C retention in Hf o.3O o.5N 0.2 memory device with low voltage and fast writing

AU - Lin, S. H.

AU - Yang, H. J.

AU - Kao, H. L.

AU - Yeh, F. S.

AU - Chin, Albert

PY - 2008

Y1 - 2008

N2 - At 150°C under a fast 100 μs and low ±9VP/E voltage, the [TaN-Ir 3Si]-HfAlO-LaAlO 3-Hf 0.3O 0.5N 0.2-HfAlO-SiO 2-Si memory device shows good device integrity of a 3.2V initial ΔV th and 2.4V 10-year extrapolated retention. This only 25% retention decay at 150°C was achieved by double quantum barriers confining trapped carriers in deep Hf 0.3O 0.5N 0.2 well.

AB - At 150°C under a fast 100 μs and low ±9VP/E voltage, the [TaN-Ir 3Si]-HfAlO-LaAlO 3-Hf 0.3O 0.5N 0.2-HfAlO-SiO 2-Si memory device shows good device integrity of a 3.2V initial ΔV th and 2.4V 10-year extrapolated retention. This only 25% retention decay at 150°C was achieved by double quantum barriers confining trapped carriers in deep Hf 0.3O 0.5N 0.2 well.

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DO - 10.1109/DRC.2008.4800734

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SN - 9781424419425

T3 - Device Research Conference - Conference Digest, DRC

SP - 61

EP - 62

BT - 66th DRC Device Research Conference Digest, DRC 2008

T2 - 66th DRC Device Research Conference Digest, DRC 2008

Y2 - 23 June 2008 through 25 June 2008

ER -