@inproceedings{bdedc9ba68304611b3097b9728f62d2a,
title = "Improved bipolar resistive switching memory using W/TaOx/W structure",
abstract = "Resistive switching memory characteristics of high-κ TaOx film in a W/TaOx/W structure have been investigated and compared with Al/TaOx/W structure. Amorphous TaOx film with a thickness of 6.8 nm was confirmed by HRTEM image and EDX analysis. The switching in Al/TaOx/W structure is found to be unstable with large variations in set and reset voltages. The memory device in W/TaOx/W structure shows good memory characteristics with a low power of ∼500μAx1.6V. The current conduction mechanism is fitted to Ohmic and SCLC in LRS and HRS, respectively. The memory device has shown good endurance characteristics of >5×103 cycles and good data retention with a stable HRS/LRS.",
keywords = "High-κ TaO, Resistive memory, Tungsten (W)",
author = "Amit Prakash and Siddheswar Maikap and Lee, {H. Y.} and G. Chen and F. Chen and Tsai, {Min Jing} and Kao, {M. J.}",
year = "2011",
doi = "10.4028/www.scientific.net/AMR.159.333",
language = "英语",
isbn = "9783037850091",
series = "Advanced Materials Research",
pages = "333--337",
booktitle = "Micro Nano Devices, Structure and Computing Systems",
note = "2010 International Conference on Micro Nano Devices, Structure and Computing Systems, MNDSCS 2010 ; Conference date: 06-11-2010 Through 07-11-2010",
}