Improved carrier distributions by varying barrier thickness for InGaN/GaN LEDs

S. F. Yu*, Ray Ming Lin, S. J. Chang, J. R. Chen, J. Y. Chu, C. T. Kuo, Z. Y. Jiao

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

12 引文 斯高帕斯(Scopus)

摘要

In this paper, we minimized efficiency droop by varying barrier thickness for InGaN/GaN multiple quantum wells (MWQs) featuring narrow quantum barriers (NQBs). The external quantum efficiency (EQE) for a light-emitting diode (LED) possessing NQBs improved by 18% at a current density of 200 Acm-2 , compared to that of a conventional LED incorporating a 12-nm-thick barrier. The enhanced carrier distribution resulting from the presence of NQBs was practically approved from another experimental design in this study. We suggest that the NQBs displayed uniform carrier distribution in active layer and decreased the carrier density in the active layer at a critical current density.

原文英語
文章編號6243151
頁(從 - 到)239-243
頁數5
期刊IEEE/OSA Journal of Display Technology
9
發行號4
DOIs
出版狀態已出版 - 2013

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