Improved Characteristics of Gd2O3 Nanocrystal Memory with Substrate High-Low Jinction Induced Band-to-Band (BTBT) Electron Injection

研究成果: 會議稿件的類型 › 會議論文

原文	美式英語
出版狀態	已出版 - 2009
事件	2009 International Electron Devices and Materials Symposia - Taoyuan, Taiwan 持續時間: 19 11 2009 → 20 11 2009

Conference	2009 International Electron Devices and Materials Symposia
期間	19/11/09 → 20/11/09

引用此

@conference{914b1eb40987413bb90422f28d51e2ae,

title = "Improved Characteristics of Gd2O3 Nanocrystal Memory with Substrate High-Low Jinction Induced Band-to-Band (BTBT) Electron Injection",

author = "Chih-Ting Lin and Jer-Chyi Wang and Chao-Sung Lai and Jui-Lin Hsu and Chi-Fong Ai",

year = "2009",

language = "American English",

note = "2009 International Electron Devices and Materials Symposia ; Conference date: 19-11-2009 Through 20-11-2009",

}

TY - CONF

T1 - Improved Characteristics of Gd2O3 Nanocrystal Memory with Substrate High-Low Jinction Induced Band-to-Band (BTBT) Electron Injection

AU - Lin, Chih-Ting

AU - Wang, Jer-Chyi

AU - Lai, Chao-Sung

AU - Hsu, Jui-Lin

AU - Ai, Chi-Fong

PY - 2009

Y1 - 2009

M3 - Proceeding

T2 - 2009 International Electron Devices and Materials Symposia

Y2 - 19 November 2009 through 20 November 2009

ER -