Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors

Ming Jyh Hwu, Hsien Chin Chiu, Shih Cheng Yang, Yi Jen Chan, Liann Be Chang

研究成果: 期刊稿件 › 文章 › 同行評審

3 引文 斯高帕斯（Scopus）

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Engineering

Material Science