Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer

Chia Hao Liu; Hsien Chin Chiu; Hsiang Chun Wang; Hsuan Ling Kao; Chong Rong Haung

Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer

Chia Hao Liu, Hsien Chin Chiu^*, Hsiang Chun Wang, Hsuan Ling Kao, Chong Rong Haung

^*此作品的通信作者

電子工程學系(含學碩博士班)

Chang Gung University

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

摘要

In this work, the dual junction-high-electron-mobility-transistor (DJ-HEMT) was investigated. The thin AlGaN was grown between the p-GaN gate and gate metal. In the TCAD simulations, the band gap and electric field were shown in this letter, proving the dual junction forming. Moreover, DJ-HEMT shows the high gate voltage swing due to the dual junction at the gate region of device, which enhance gate performance. By contrast with standard p-GaN HEMT (ST-HEMT), DJ-HEMT shows higher VTH of 2V, saturation current of 187mA/mm, ION/IOFF ratio of 5.1 x 10⁸ and gate swing voltage which is higher than 20V. In addition, DJ-HEMT also shows the lower device leakage current and superior life time measurement due to the thicker and higher barrier of AlGaN cap layer.

原文	英語
主出版物標題	CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers
發行者	CS Mantech
頁面	89-92
頁數	4
ISBN（電子）	9781893580312
出版狀態	已出版 - 2021
事件	35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021 - Orlando, Virtual, 美國持續時間: 24 05 2021 → 27 05 2021

出版系列

名字	CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

Conference

Conference	35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021
國家/地區	美國
城市	Orlando, Virtual
期間	24/05/21 → 27/05/21

文獻附註

Publisher Copyright:
© 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.

其它文件與鏈接

Link to publication in Scopus

引用此

Liu, C. H., Chiu, H. C., Wang, H. C., Kao, H. L., & Haung, C. R. (2021). Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer. 於 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers (頁 89-92). (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers). CS Mantech.

Liu, Chia Hao ; Chiu, Hsien Chin ; Wang, Hsiang Chun 等. / Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer. CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2021. 頁 89-92 (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

@inproceedings{640d1ebd173745ed994dc7b57bed6e98,

title = "Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer",

abstract = "In this work, the dual junction-high-electron-mobility-transistor (DJ-HEMT) was investigated. The thin AlGaN was grown between the p-GaN gate and gate metal. In the TCAD simulations, the band gap and electric field were shown in this letter, proving the dual junction forming. Moreover, DJ-HEMT shows the high gate voltage swing due to the dual junction at the gate region of device, which enhance gate performance. By contrast with standard p-GaN HEMT (ST-HEMT), DJ-HEMT shows higher VTH of 2V, saturation current of 187mA/mm, ION/IOFF ratio of 5.1 x 108 and gate swing voltage which is higher than 20V. In addition, DJ-HEMT also shows the lower device leakage current and superior life time measurement due to the thicker and higher barrier of AlGaN cap layer.",

keywords = "Etching stop, Gate reliability, Life time, Normally-off, P-GaN gate HEMT, TCAD simulation",

author = "Liu, {Chia Hao} and Chiu, {Hsien Chin} and Wang, {Hsiang Chun} and Kao, {Hsuan Ling} and Haung, {Chong Rong}",

note = "Publisher Copyright: {\textcopyright} 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.; 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021 ; Conference date: 24-05-2021 Through 27-05-2021",

year = "2021",

language = "英语",

series = "CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

publisher = "CS Mantech",

pages = "89--92",

booktitle = "CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

}

Liu, CH, Chiu, HC, Wang, HC, Kao, HL & Haung, CR 2021, Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer. 於 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers, CS Mantech, 頁 89-92, 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021, Orlando, Virtual, 美國, 24/05/21.

Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer. / Liu, Chia Hao; Chiu, Hsien Chin; Wang, Hsiang Chun 等.
CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2021. p. 89-92 (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer

AU - Liu, Chia Hao

AU - Chiu, Hsien Chin

AU - Wang, Hsiang Chun

AU - Kao, Hsuan Ling

AU - Haung, Chong Rong

PY - 2021

Y1 - 2021

N2 - In this work, the dual junction-high-electron-mobility-transistor (DJ-HEMT) was investigated. The thin AlGaN was grown between the p-GaN gate and gate metal. In the TCAD simulations, the band gap and electric field were shown in this letter, proving the dual junction forming. Moreover, DJ-HEMT shows the high gate voltage swing due to the dual junction at the gate region of device, which enhance gate performance. By contrast with standard p-GaN HEMT (ST-HEMT), DJ-HEMT shows higher VTH of 2V, saturation current of 187mA/mm, ION/IOFF ratio of 5.1 x 108 and gate swing voltage which is higher than 20V. In addition, DJ-HEMT also shows the lower device leakage current and superior life time measurement due to the thicker and higher barrier of AlGaN cap layer.

AB - In this work, the dual junction-high-electron-mobility-transistor (DJ-HEMT) was investigated. The thin AlGaN was grown between the p-GaN gate and gate metal. In the TCAD simulations, the band gap and electric field were shown in this letter, proving the dual junction forming. Moreover, DJ-HEMT shows the high gate voltage swing due to the dual junction at the gate region of device, which enhance gate performance. By contrast with standard p-GaN HEMT (ST-HEMT), DJ-HEMT shows higher VTH of 2V, saturation current of 187mA/mm, ION/IOFF ratio of 5.1 x 108 and gate swing voltage which is higher than 20V. In addition, DJ-HEMT also shows the lower device leakage current and superior life time measurement due to the thicker and higher barrier of AlGaN cap layer.

KW - Etching stop

KW - Gate reliability

KW - Life time

KW - Normally-off

KW - P-GaN gate HEMT

KW - TCAD simulation

UR - http://www.scopus.com/inward/record.url?scp=85124548461&partnerID=8YFLogxK

M3 - 会议稿件

AN - SCOPUS:85124548461

T3 - CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

SP - 89

EP - 92

BT - CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

PB - CS Mantech

T2 - 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021

Y2 - 24 May 2021 through 27 May 2021

ER -

Liu CH, Chiu HC, Wang HC, Kao HL, Haung CR. Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer. 於 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech. 2021. p. 89-92. (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer

摘要

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