TY - JOUR
T1 - Improved method for MOS transistor output conductance
AU - Jen, Steve H.
AU - Oshima, Yoichi
AU - Sheu, Bing
PY - 1996
Y1 - 1996
N2 - A single-equation approach as an extension to the EKV MOS transistor model to realize the drain current modeling characteristics for low-voltage MOS circuits is presented. Instead of three sets of separate equations in the triode, saturation, and weak inversion regions, only a single expression which is valid to describe the drain current behavior in all the transistor operation regions can be realized by using hyperbola and interpolation techniques. Since all the terms and the derivatives in this expression are continuous, this single-equation can predict good results for the current, output conductance, and transconductance with continuous and smooth characteristics.
AB - A single-equation approach as an extension to the EKV MOS transistor model to realize the drain current modeling characteristics for low-voltage MOS circuits is presented. Instead of three sets of separate equations in the triode, saturation, and weak inversion regions, only a single expression which is valid to describe the drain current behavior in all the transistor operation regions can be realized by using hyperbola and interpolation techniques. Since all the terms and the derivatives in this expression are continuous, this single-equation can predict good results for the current, output conductance, and transconductance with continuous and smooth characteristics.
UR - http://www.scopus.com/inward/record.url?scp=0029721190&partnerID=8YFLogxK
M3 - 会议文章
AN - SCOPUS:0029721190
SN - 0271-4310
VL - 4
SP - 448
EP - 451
JO - Proceedings - IEEE International Symposium on Circuits and Systems
JF - Proceedings - IEEE International Symposium on Circuits and Systems
T2 - Proceedings of the 1996 IEEE International Symposium on Circuits and Systems, ISCAS. Part 1 (of 4)
Y2 - 12 May 1996 through 15 May 1996
ER -