Improved method for MOS transistor output conductance

A single-equation approach as an extension to the EKV MOS transistor model to realize the drain current modeling characteristics for low-voltage MOS circuits is presented. Instead of three sets of separate equations in the triode, saturation, and weak inversion regions, only a single expression which is valid to describe the drain current behavior in all the transistor operation regions can be realized by using hyperbola and interpolation techniques. Since all the terms and the derivatives in this expression are continuous, this single-equation can predict good results for the current, output conductance, and transconductance with continuous and smooth characteristics.