@inproceedings{4ba963dc926e4de9a8e8c98c38a4f8a5,
title = "Improved resistance memory characteristics and switching mechanism using TiN electrode on TaOx/W structure",
abstract = "Improvement in the resistive switching characteristics using TiN bottom electrode on TaOx/W structure as compared to W electrode is reported. The thickness of TaOx layer is confirmed by high-resolution TEM image. The memory device with TiN electrode has shown formation-free repeatable bipolar resistive switching with resistance ratio of >30. Besides, improved resistive switching performance in terms of lower operation current (50 vs. 300 μ), longer read endurance (>105 cycles), 85 °C data retention of > 104 seconds and device yield of >90% is also achieved for TiN electrode. The TiN/TaOx interface is playing a key role in controlling the oxygen vacancy defects which in turn control the formation/dissolution of conducting filament.",
keywords = "RRAM, bipolar switching, filament, high-k tantalum oxide, interfacial layer, oxygen ion migration",
author = "A. Prakash and S. Maikap",
year = "2013",
doi = "10.1109/INEC.2013.6465977",
language = "英语",
isbn = "9781467348416",
series = "Proceedings - Winter Simulation Conference",
pages = "136--138",
booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013",
note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",
}