Improved resistance switching characteristics in Ti-Doped Yb ₂O ₃ for resistive nonvolatile memory devices

A conventional approach of doping to control the bistable resistance switching in Yb ₂O ₃ was investigated for nonvolatile memory applications. With the help of Ti doping into oxide films during the process, better cycle-to-cycle resistance distribution and switching voltage uniformity were found due to modulation of current conduction mechanism from space-charge-limited current in Yb ₂O ₃ to Schottky type in YbTiO _x. The program/erase cycles with successive readout operation over 10 ⁵ cycles can be achieved without any degradation. No data loss was found upon continuous readout process at both room temperature and 85 ° C The Ni/YbTiO _xTaN memory is a promising candidate to be integrated into future memory processes.