Improved RF power performance in a 0.18-μ MOSFET which uses an asymmetric drain design

T. Chang; H. L. Kao; S. P. McAlister; K. Y. Horng; Albert Chin

doi:10.1109/LED.2008.2007509

Improved RF power performance in a 0.18-μ MOSFET which uses an asymmetric drain design

T. Chang^*, H. L. Kao, S. P. McAlister, K. Y. Horng, Albert Chin

^*此作品的通信作者

電子工程學系(含學碩博士班)

研究成果: 期刊稿件 › 文章 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

We have fabricated 0.18-μ asymmetric MOSFETs using a foundry-standard 1P6M process, without making any process modifications. In comparison with a conventional 0.18-μ MOSFET, the asymmetric MOSFET design leads to a 64% improvement in the saturated output power and 8 dB better adjacent channel power ratio. The improvement in the RF power performance of these MOS transistors suggests that they should be suitable for medium power amplifiers.

原文	英語
頁（從 - 到）	1402-1404
頁數	3
期刊	IEEE Electron Device Letters
卷	29
發行號	12
DOIs	https://doi.org/10.1109/LED.2008.2007509
出版狀態	已出版 - 2008

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10.1109/LED.2008.2007509

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@article{891b5a810f9841d89a476194bd4a8793,

title = "Improved RF power performance in a 0.18-μ MOSFET which uses an asymmetric drain design",

abstract = "We have fabricated 0.18-μ asymmetric MOSFETs using a foundry-standard 1P6M process, without making any process modifications. In comparison with a conventional 0.18-μ MOSFET, the asymmetric MOSFET design leads to a 64% improvement in the saturated output power and 8 dB better adjacent channel power ratio. The improvement in the RF power performance of these MOS transistors suggests that they should be suitable for medium power amplifiers.",

keywords = "Asymmetric, Lightly doped-drain (LDD), MOS",

author = "T. Chang and Kao, {H. L.} and McAlister, {S. P.} and Horng, {K. Y.} and Albert Chin",

year = "2008",

doi = "10.1109/LED.2008.2007509",

language = "英语",

volume = "29",

pages = "1402--1404",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Improved RF power performance in a 0.18-μ MOSFET which uses an asymmetric drain design

AU - Chang, T.

AU - Kao, H. L.

AU - McAlister, S. P.

AU - Horng, K. Y.

AU - Chin, Albert

PY - 2008

Y1 - 2008

N2 - We have fabricated 0.18-μ asymmetric MOSFETs using a foundry-standard 1P6M process, without making any process modifications. In comparison with a conventional 0.18-μ MOSFET, the asymmetric MOSFET design leads to a 64% improvement in the saturated output power and 8 dB better adjacent channel power ratio. The improvement in the RF power performance of these MOS transistors suggests that they should be suitable for medium power amplifiers.

AB - We have fabricated 0.18-μ asymmetric MOSFETs using a foundry-standard 1P6M process, without making any process modifications. In comparison with a conventional 0.18-μ MOSFET, the asymmetric MOSFET design leads to a 64% improvement in the saturated output power and 8 dB better adjacent channel power ratio. The improvement in the RF power performance of these MOS transistors suggests that they should be suitable for medium power amplifiers.

KW - Asymmetric

KW - Lightly doped-drain (LDD)

KW - MOS

UR - http://www.scopus.com/inward/record.url?scp=57049165920&partnerID=8YFLogxK

U2 - 10.1109/LED.2008.2007509

DO - 10.1109/LED.2008.2007509

M3 - 文章

AN - SCOPUS:57049165920

SN - 0741-3106

VL - 29

SP - 1402

EP - 1404

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

ER -

Improved RF power performance in a 0.18-μ MOSFET which uses an asymmetric drain design

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