Improvement of charge programming and retention by NH3 plasma treatment on tunnel oxide for SiO2/SixGe 1-x/SiO2 tri-layer memory devices

Kung Ming Fan; Chao Sung Lai; Yu China Fang; Chi Fong Ai; C. R. Chen

doi:10.1109/ISDRS.2007.4422365

Improvement of charge programming and retention by NH₃ plasma treatment on tunnel oxide for SiO₂/Si_xGe _1-x/SiO₂ tri-layer memory devices

Kung Ming Fan
, Chao Sung Lai
, Yu China Fang
, Chi Fong Ai
, C. R. Chen

電子工程學系(含學碩博士班)

Chang Gung University
Chung-shan Institute of Science and Technology Taiwan
Institution of Nuclear Energy Research
Material Science Service Corporation

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

原文	英語
主出版物標題	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422365
出版狀態	已出版 - 2007
事件	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, 美國持續時間: 12 12 2007 → 14 12 2007

出版系列

名字	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
國家/地區	美國
城市	College Park, MD
期間	12/12/07 → 14/12/07

存取文件

10.1109/ISDRS.2007.4422365

其它文件與鏈接

Link to publication in Scopus

引用此

Fan, K. M., Lai, C. S., Fang, Y. C., Ai, C. F., & Chen, C. R. (2007). Improvement of charge programming and retention by NH₃ plasma treatment on tunnel oxide for SiO₂/Si_xGe _1-x/SiO₂ tri-layer memory devices. 於 2007 International Semiconductor Device Research Symposium, ISDRS 文章 4422365 (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422365

@inproceedings{f3aa1d0f3b1744a3b7ec6091bcf247f2,

title = "Improvement of charge programming and retention by NH3 plasma treatment on tunnel oxide for SiO2/SixGe 1-x/SiO2 tri-layer memory devices",

author = "Fan, \{Kung Ming\} and Lai, \{Chao Sung\} and Fang, \{Yu China\} and Ai, \{Chi Fong\} and Chen, \{C. R.\}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422365",

language = "英语",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Fan, KM, Lai, CS, Fang, YC, Ai, CF & Chen, CR 2007, Improvement of charge programming and retention by NH₃ plasma treatment on tunnel oxide for SiO₂/Si_xGe _1-x/SiO₂ tri-layer memory devices. 於 2007 International Semiconductor Device Research Symposium, ISDRS., 4422365, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, 美國, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422365

Improvement of charge programming and retention by NH₃ plasma treatment on tunnel oxide for SiO₂/Si_xGe _1-x/SiO₂ tri-layer memory devices. / Fan, Kung Ming; Lai, Chao Sung; Fang, Yu China 等.
2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422365 (2007 International Semiconductor Device Research Symposium, ISDRS).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Improvement of charge programming and retention by NH3 plasma treatment on tunnel oxide for SiO2/SixGe 1-x/SiO2 tri-layer memory devices

AU - Fan, Kung Ming

AU - Lai, Chao Sung

AU - Fang, Yu China

AU - Ai, Chi Fong

AU - Chen, C. R.

PY - 2007

Y1 - 2007

UR - https://www.scopus.com/pages/publications/44949117677

U2 - 10.1109/ISDRS.2007.4422365

DO - 10.1109/ISDRS.2007.4422365

M3 - 会议稿件

AN - SCOPUS:44949117677

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -