Improvement of high-κ Ta2O5-based resistive switching memory using Ti interfacial layer

A. Prakash; S. Maikap; G. Chen; F. Chen; M. J. Kao; M. J. Tsai

doi:10.1109/VTSA.2011.5872235

Improvement of high-κ Ta₂O₅-based resistive switching memory using Ti interfacial layer

A. Prakash, S. Maikap^*, G. Chen, F. Chen, M. J. Kao, M. J. Tsai

^*此作品的通信作者

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Improved resistive switching memory characteristics in a W/Ti/Ta ₂O₅/W device with a small size of 150 nm have been investigated for the first time. TEM image shows amorphous Ta₂O ₅ film with a thickness of 7 nm. Memory device has a good repeatable bipolar memory behavior and a large sensing margin of 2000. The memory device has shown good endurance of at least 10⁴ cycles and excellent data retention at 85C.

原文	英語
主出版物標題	Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
頁面	66-69
頁數	4
DOIs	https://doi.org/10.1109/VTSA.2011.5872235
出版狀態	已出版 - 2011
對外發佈	是
事件	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, 台灣持續時間: 25 04 2011 → 27 04 2011

出版系列

名字	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
國家/地區	台灣
城市	Hsinchu
期間	25/04/11 → 27/04/11

存取文件

10.1109/VTSA.2011.5872235

其它文件與鏈接

Link to publication in Scopus

引用此

Prakash, A., Maikap, S., Chen, G., Chen, F., Kao, M. J., & Tsai, M. J. (2011). Improvement of high-κ Ta₂O₅-based resistive switching memory using Ti interfacial layer. 於 Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (頁 66-69). 文章 5872235 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872235

@inproceedings{48a4846ec6e344239070b0991127cc18,

title = "Improvement of high-κ Ta2O5-based resistive switching memory using Ti interfacial layer",

abstract = "Improved resistive switching memory characteristics in a W/Ti/Ta 2O5/W device with a small size of 150 nm have been investigated for the first time. TEM image shows amorphous Ta2O 5 film with a thickness of 7 nm. Memory device has a good repeatable bipolar memory behavior and a large sensing margin of 2000. The memory device has shown good endurance of at least 104 cycles and excellent data retention at 85C.",

author = "A. Prakash and S. Maikap and G. Chen and F. Chen and Kao, {M. J.} and Tsai, {M. J.}",

year = "2011",

doi = "10.1109/VTSA.2011.5872235",

language = "英语",

isbn = "9781424484928",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "66--69",

booktitle = "Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011",

note = "2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 ; Conference date: 25-04-2011 Through 27-04-2011",

}

Prakash, A, Maikap, S, Chen, G, Chen, F, Kao, MJ & Tsai, MJ 2011, Improvement of high-κ Ta₂O₅-based resistive switching memory using Ti interfacial layer. 於 Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011., 5872235, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 頁 66-69, 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011, Hsinchu, 台灣, 25/04/11. https://doi.org/10.1109/VTSA.2011.5872235

Improvement of high-κ Ta₂O₅-based resistive switching memory using Ti interfacial layer. / Prakash, A.; Maikap, S.; Chen, G. 等.
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 66-69 5872235 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

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AU - Chen, G.

AU - Chen, F.

AU - Kao, M. J.

AU - Tsai, M. J.

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AB - Improved resistive switching memory characteristics in a W/Ti/Ta 2O5/W device with a small size of 150 nm have been investigated for the first time. TEM image shows amorphous Ta2O 5 film with a thickness of 7 nm. Memory device has a good repeatable bipolar memory behavior and a large sensing margin of 2000. The memory device has shown good endurance of at least 104 cycles and excellent data retention at 85C.

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DO - 10.1109/VTSA.2011.5872235

M3 - 会议稿件

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SN - 9781424484928

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

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BT - Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011

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ER -

Prakash A, Maikap S, Chen G, Chen F, Kao MJ, Tsai MJ. Improvement of high-κ Ta₂O₅-based resistive switching memory using Ti interfacial layer. 於 Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 66-69. 5872235. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2011.5872235