Improving the reliability of eutectic bonding vertical power light-emitting diodes by a Mo buffer layer

Liann Be Chang, Chia I. Yen, Ting Wei You, Ming Jer Jeng*, Chun Te Wu, Sung Cheng Hu, Yang Kuao Kuo

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

4 引文 斯高帕斯(Scopus)

摘要

As a major step in the conduction of heat dissipation, wafer bonding significantly contributes to device reliability. This work presents the Cu-Sn eutectic bonding with a Mo buffer layer for light emitting diodes to increase its reliability. The conventional Ag-paste bonding and Cu-Sn bonding (without Mo top layer) are also studied for comparison. Their reliability is measured using thermal shock treatments ranging from - 40 to 120 °C (200 cycles). Experimental results indicate that the eutectic bonding with a Mo buffer layer demonstrates a better device performance than the other two counterparts. Following thermal shock treatment, the light droops for the Ag-paste, Cu-Sn, and Mo/Cu-Sn bonding samples are 15, 11 and 7%, respectively. Additionally, the increasing ratios of thermal resistance are 26, 33 and 19%, respectively. Moreover, adding the Mo buffer layer can relieve the thermal stress problem, owing to the thermal expansion mismatch in Gallium-Nitride/Cu-Sn/submount wafer bonding structures.

原文英語
頁(從 - 到)500-503
頁數4
期刊Thin Solid Films
570
發行號PB
DOIs
出版狀態已出版 - 03 11 2014

文獻附註

Publisher Copyright:
© 2014 Elsevier B.V.

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