摘要
As a major step in the conduction of heat dissipation, wafer bonding significantly contributes to device reliability. This work presents the Cu-Sn eutectic bonding with a Mo buffer layer for light emitting diodes to increase its reliability. The conventional Ag-paste bonding and Cu-Sn bonding (without Mo top layer) are also studied for comparison. Their reliability is measured using thermal shock treatments ranging from - 40 to 120 °C (200 cycles). Experimental results indicate that the eutectic bonding with a Mo buffer layer demonstrates a better device performance than the other two counterparts. Following thermal shock treatment, the light droops for the Ag-paste, Cu-Sn, and Mo/Cu-Sn bonding samples are 15, 11 and 7%, respectively. Additionally, the increasing ratios of thermal resistance are 26, 33 and 19%, respectively. Moreover, adding the Mo buffer layer can relieve the thermal stress problem, owing to the thermal expansion mismatch in Gallium-Nitride/Cu-Sn/submount wafer bonding structures.
原文 | 英語 |
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頁(從 - 到) | 500-503 |
頁數 | 4 |
期刊 | Thin Solid Films |
卷 | 570 |
發行號 | PB |
DOIs | |
出版狀態 | 已出版 - 03 11 2014 |
文獻附註
Publisher Copyright:© 2014 Elsevier B.V.