Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor

C. M. Tan; Y. F. Wong; P. H. Teoh; G. Y. Huang

doi:10.1109/PEDS.2003.1282685

Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor

C. M. Tan^*, Y. F. Wong, P. H. Teoh, G. Y. Huang

^*此作品的通信作者

Nanyang Technological University

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

Recently, a new IGBT structure, carrier stored trench gate bipolar transistor (CSTBT) was introduced. This structure, modified from the Trench IGBT, preserves the good characteristics of trench IGBT, and also improves the trade off characteristic between the on-state voltage drop and switching loss. However, its reverse blocking voltage is only around 10 V. The low reverse blocking capability of the CSTBT could limit its application in power electronic circuits. To increase the reverse blocking voltage, a p-layer is added in between the P⁺-N⁺ junction. Simulation shows that the additional p-layer has no effect to the forward characteristic and the turn-on speed of the IGBT, except to increase the reverse blocking voltage to above 80 V.

原文	英語
主出版物標題	5th International Conference on Power Electronics and Drive Systems, PEDS 2003 - Proceedings
編輯	King-Jet Tseng
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	89-92
頁數	4
ISBN（電子）	0780378857
DOIs	https://doi.org/10.1109/PEDS.2003.1282685
出版狀態	已出版 - 2003
對外發佈	是
事件	5th International Conference on Power Electronics and Drive Systems, PEDS 2003 - Singapore, 新加坡持續時間: 17 11 2003 → 20 11 2003

出版系列

名字	Proceedings of the International Conference on Power Electronics and Drive Systems
卷	1

Conference

Conference	5th International Conference on Power Electronics and Drive Systems, PEDS 2003
國家/地區	新加坡
城市	Singapore
期間	17/11/03 → 20/11/03

文獻附註

Publisher Copyright:
© 2003 IEEE.

存取文件

10.1109/PEDS.2003.1282685

其它文件與鏈接

Link to publication in Scopus

引用此

Tan, C. M., Wong, Y. F., Teoh, P. H., & Huang, G. Y. (2003). Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor. 於 K.-J. Tseng (編輯), 5th International Conference on Power Electronics and Drive Systems, PEDS 2003 - Proceedings (頁 89-92). 文章 1282685 (Proceedings of the International Conference on Power Electronics and Drive Systems; 卷 1). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PEDS.2003.1282685

Tan, C. M. ; Wong, Y. F. ; Teoh, P. H. 等. / Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor. 5th International Conference on Power Electronics and Drive Systems, PEDS 2003 - Proceedings. 編輯 / King-Jet Tseng. Institute of Electrical and Electronics Engineers Inc., 2003. 頁 89-92 (Proceedings of the International Conference on Power Electronics and Drive Systems).

@inproceedings{ac2d9f88e8e544dc891c3b94028ec1f3,

title = "Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor",

abstract = "Recently, a new IGBT structure, carrier stored trench gate bipolar transistor (CSTBT) was introduced. This structure, modified from the Trench IGBT, preserves the good characteristics of trench IGBT, and also improves the trade off characteristic between the on-state voltage drop and switching loss. However, its reverse blocking voltage is only around 10 V. The low reverse blocking capability of the CSTBT could limit its application in power electronic circuits. To increase the reverse blocking voltage, a p-layer is added in between the P+-N+ junction. Simulation shows that the additional p-layer has no effect to the forward characteristic and the turn-on speed of the IGBT, except to increase the reverse blocking voltage to above 80 V.",

keywords = "CSTBT, IGBT, Reverse Blocking Voltage",

author = "Tan, {C. M.} and Wong, {Y. F.} and Teoh, {P. H.} and Huang, {G. Y.}",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 5th International Conference on Power Electronics and Drive Systems, PEDS 2003 ; Conference date: 17-11-2003 Through 20-11-2003",

year = "2003",

doi = "10.1109/PEDS.2003.1282685",

language = "英语",

series = "Proceedings of the International Conference on Power Electronics and Drive Systems",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "89--92",

editor = "King-Jet Tseng",

booktitle = "5th International Conference on Power Electronics and Drive Systems, PEDS 2003 - Proceedings",

address = "美国",

}

Tan, CM, Wong, YF, Teoh, PH & Huang, GY 2003, Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor. 於 K-J Tseng (編輯), 5th International Conference on Power Electronics and Drive Systems, PEDS 2003 - Proceedings., 1282685, Proceedings of the International Conference on Power Electronics and Drive Systems, 卷 1, Institute of Electrical and Electronics Engineers Inc., 頁 89-92, 5th International Conference on Power Electronics and Drive Systems, PEDS 2003, Singapore, 新加坡, 17/11/03. https://doi.org/10.1109/PEDS.2003.1282685

Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor. / Tan, C. M.; Wong, Y. F.; Teoh, P. H. 等.
5th International Conference on Power Electronics and Drive Systems, PEDS 2003 - Proceedings. 編輯 / King-Jet Tseng. Institute of Electrical and Electronics Engineers Inc., 2003. p. 89-92 1282685 (Proceedings of the International Conference on Power Electronics and Drive Systems; 卷 1).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor

AU - Tan, C. M.

AU - Wong, Y. F.

AU - Teoh, P. H.

AU - Huang, G. Y.

PY - 2003

Y1 - 2003

N2 - Recently, a new IGBT structure, carrier stored trench gate bipolar transistor (CSTBT) was introduced. This structure, modified from the Trench IGBT, preserves the good characteristics of trench IGBT, and also improves the trade off characteristic between the on-state voltage drop and switching loss. However, its reverse blocking voltage is only around 10 V. The low reverse blocking capability of the CSTBT could limit its application in power electronic circuits. To increase the reverse blocking voltage, a p-layer is added in between the P+-N+ junction. Simulation shows that the additional p-layer has no effect to the forward characteristic and the turn-on speed of the IGBT, except to increase the reverse blocking voltage to above 80 V.

AB - Recently, a new IGBT structure, carrier stored trench gate bipolar transistor (CSTBT) was introduced. This structure, modified from the Trench IGBT, preserves the good characteristics of trench IGBT, and also improves the trade off characteristic between the on-state voltage drop and switching loss. However, its reverse blocking voltage is only around 10 V. The low reverse blocking capability of the CSTBT could limit its application in power electronic circuits. To increase the reverse blocking voltage, a p-layer is added in between the P+-N+ junction. Simulation shows that the additional p-layer has no effect to the forward characteristic and the turn-on speed of the IGBT, except to increase the reverse blocking voltage to above 80 V.

KW - CSTBT

KW - IGBT

KW - Reverse Blocking Voltage

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M3 - 会议稿件

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T3 - Proceedings of the International Conference on Power Electronics and Drive Systems

SP - 89

EP - 92

BT - 5th International Conference on Power Electronics and Drive Systems, PEDS 2003 - Proceedings

A2 - Tseng, King-Jet

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 5th International Conference on Power Electronics and Drive Systems, PEDS 2003

Y2 - 17 November 2003 through 20 November 2003

ER -

Tan CM, Wong YF, Teoh PH, Huang GY. Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor. 於 Tseng KJ, 編輯, 5th International Conference on Power Electronics and Drive Systems, PEDS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 89-92. 1282685. (Proceedings of the International Conference on Power Electronics and Drive Systems). doi: 10.1109/PEDS.2003.1282685

Improving the reverse blocking capability of carrier stored trench-gate bipolar transistor

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