Increasing solar efficiency of InGaN/GaN multiple quantum well solar cells with a reflective aluminum layer or a flip-chip structure

Ming Jer Jeng*, Yu Lin Lee

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

11 引文 斯高帕斯(Scopus)

摘要

Multiple quantum well solar cells (MQWSC) have the potential to be a highly efficient alternative to tandem or cascade systems. However, in conventional multiple quantum well solar cells, the quantum well layer does not usually receive and absorb enough light. To increase the absorption in the quantum well layer of an InGaN/GaN multiple quantum well solar cell, a reflective aluminum layer has been proposed and investigated here. We also studied the use of a flip-chip structure to increase the effectiveness of the heat sink and to prevent the shading loss that occurs in top contact metal of InGaN/GaN MQWSCs. We found that In 0.2Ga 0.8N/GaN MQWSCs with a reflective aluminum layer are 9.8% more efficient than those without a reflective aluminum layer. Meanwhile, In 0.28Ga 0.72N/GaN MQWSCs with a reflective aluminum layer are 4% more efficient than those without a reflective layer. In 0.28Ga 0.72N/GaN MQWSCs were expected by their lower well bandgap to be more efficient than In 0.2Ga 0.8N/GaN MQWSCs, but they are not. The lower efficiency enhancement in In 0.28Ga 0.72N/GaN MQWSCs is attributable to the greater number of defects or recombination centers in the film with higher indium content. In 0.2Ga 0.8N/GaN and In 0.28Ga 0.72N/GaN MQWSCs with a flip-chip structure exhibit efficiency enhancements of 1.4% and 1.1%, respectively, over those without a flip-chip structure.

原文英語
頁(從 - 到)H525-H528
期刊Journal of the Electrochemical Society
159
發行號5
DOIs
出版狀態已出版 - 2012

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