Influence of strong reverse-bias on the leakage behavior of light-emitting diodes

Y. N. Wang, C. Y. Tseng, Y. C. Chen, N. C. Chen*

*此作品的通信作者

研究成果: 圖書/報告稿件的類型會議稿件同行評審

摘要

Leakage current is an important property in InGaN light-emitting diodes (LEDs). An LED chip is operated using strong reverse-bias to increase its leakage current. The leakage current behavior of the operated LED chip is compared with that of an unoperated LED chip.

原文英語
主出版物標題Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
發行者Optical Society of America
ISBN(列印)1424411742, 9781424411740
出版狀態已出版 - 2007
事件Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 - Seoul, 韓國
持續時間: 26 08 200726 08 2007

出版系列

名字Optics InfoBase Conference Papers
ISSN(電子)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
國家/地區韓國
城市Seoul
期間26/08/0726/08/07

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