Influence of titanium content on the structural and electrical properties of Er1-x Tix Oy gate dielectrics

Tung Ming Pan*, Wei Hao Shu

*此作品的通信作者

研究成果: 期刊稿件文章同行評審

3 引文 斯高帕斯(Scopus)

摘要

This paper describes the structural properties and electrical characteristics of thin erbium titanium oxide (Er2 TiO5) as gate dielectrics deposited on silicon substrates through reactive radio frequency sputtering. The structural and morphological features of these films were explored by X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy measurements. It is found that the Er2 TiO5 film prepared under a 4.5 nm Ti metal film and annealed at 700°C exhibited a thinner capacitance equivalent thickness and excellent electrical properties than other films, including the leakage current density, interface trap density, and hysteresis in the capacitance-voltage curves. We attribute this behavior to the optimum titanium content in the metal oxide film which helps to suppress the information of the interfacial SiO2 and silicate at the Er2 TiO5 /Si interface. These materials also show negligible degrees of charge trapping at high electric field stress.

原文英語
頁(從 - 到)H247-H253
期刊Journal of the Electrochemical Society
155
發行號4
DOIs
出版狀態已出版 - 2008

指紋

深入研究「Influence of titanium content on the structural and electrical properties of Er1-x Tix Oy gate dielectrics」主題。共同形成了獨特的指紋。

引用此