Influence of titanium content on the structural and electrical properties of Er_1-x Ti_x O_y gate dielectrics

Physics

• Atomic Force Microscopy 50%
• Capacitance 100%
• Dielectrics 100%
• Electric Fields 50%
• Electric Potential 50%
• Electrical Properties 100%
• Erbium 50%
• Frequencies 50%
• Hysteresis 50%
• Information 50%
• Metal 50%
• Metal Films 50%
• Silicon 50%
• Stress Field 50%
• Substrates 50%
• Titanium 100%
• Titanium Dioxide 50%
• X Ray Diffraction 50%
• X Ray Spectroscopy 50%

Material Science

• Atomic Force Microscopy 33%
• Capacitance 66%
• Charge Trapping 33%
• Density 66%
• Dielectric Material 100%
• Electrical Property 100%
• Erbium 33%
• Film 33%
• Material 33%
• Metal Film 33%
• Metal Oxide 33%
• Radio Frequency Sputtering 33%
• Silicate 33%
• Silicon 33%
• Structural Property 33%
• Titanium 100%
• Titanium Oxide 33%
• X-Ray Diffraction 33%
• X-Ray Photoelectron Spectroscopy 33%