Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor

William Cheng Yu Ma; Chun Jung Su; Kuo Hsing Kao; Ta Chun Cho; Jing Qiang Guo; Cheng Jun Wu; Po Ying Wu; Jia Yuan Hung

Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor

William Cheng Yu Ma
, Chun Jung Su
, Kuo Hsing Kao
, Ta Chun Cho
, Jing Qiang Guo
, Cheng Jun Wu
, Po Ying Wu
, Jia Yuan Hung

National Sun Yat-sen University
National Yang Ming Chiao Tung University
National Cheng Kung University
Taiwan Semiconductor Research Institute

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

摘要

Thinning the thickness of the channel to the nanosheet structure effectively improves the control ability of the gate voltage to the channel potential to enhance the performance of the device and become the development direction of the device. Still, the influence on reliability degradation is mostly not considered simultaneously. This work investigates the effect of channel thinning on polycrystalline-silicon thin film transistors using nanosheet channel structures on device performance and reliability and finds that the degradation of device reliability is more severe with the thinning of nanosheet channels. The results present a reliability issue for particular improvement in the future development of nanosheet structures.

原文	英語
主出版物標題	30th International Workshop on Active-Matrix Flatpanel Displays and Devices
主出版物子標題	TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	126-128
頁數	3
ISBN（電子）	9784991216947
出版狀態	已出版 - 2023
對外發佈	是
事件	30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Hybrid, Kyoto, 日本持續時間: 04 07 2023 → 07 07 2023

出版系列

名字	30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings

Conference

Conference	30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023
國家/地區	日本
城市	Hybrid, Kyoto
期間	04/07/23 → 07/07/23

文獻附註

Publisher Copyright:
© 2023 FTFMD.

其它文件與鏈接

Link to publication in Scopus

引用此

Ma, W. C. Y., Su, C. J., Kao, K. H., Cho, T. C., Guo, J. Q., Wu, C. J., Wu, P. Y., & Hung, J. Y. (2023). Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor. 於 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings (頁 126-128). (30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc..

Ma, William Cheng Yu ; Su, Chun Jung ; Kao, Kuo Hsing 等. / Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor. 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. 頁 126-128 (30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings).

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title = "Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor",

abstract = "Thinning the thickness of the channel to the nanosheet structure effectively improves the control ability of the gate voltage to the channel potential to enhance the performance of the device and become the development direction of the device. Still, the influence on reliability degradation is mostly not considered simultaneously. This work investigates the effect of channel thinning on polycrystalline-silicon thin film transistors using nanosheet channel structures on device performance and reliability and finds that the degradation of device reliability is more severe with the thinning of nanosheet channels. The results present a reliability issue for particular improvement in the future development of nanosheet structures.",

author = "Ma, \{William Cheng Yu\} and Su, \{Chun Jung\} and Kao, \{Kuo Hsing\} and Cho, \{Ta Chun\} and Guo, \{Jing Qiang\} and Wu, \{Cheng Jun\} and Wu, \{Po Ying\} and Hung, \{Jia Yuan\}",

note = "Publisher Copyright: {\textcopyright} 2023 FTFMD.; 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 ; Conference date: 04-07-2023 Through 07-07-2023",

year = "2023",

language = "英语",

series = "30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "126--128",

booktitle = "30th International Workshop on Active-Matrix Flatpanel Displays and Devices",

address = "美国",

}

Ma, WCY, Su, CJ, Kao, KH, Cho, TC, Guo, JQ, Wu, CJ, Wu, PY & Hung, JY 2023, Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor. 於 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings. 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 頁 126-128, 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023, Hybrid, Kyoto, 日本, 04/07/23.

Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor. / Ma, William Cheng Yu; Su, Chun Jung; Kao, Kuo Hsing 等.
30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. p. 126-128 (30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings).

研究成果: 圖書/報告稿件的類型 › 會議稿件 › 同行評審

TY - GEN

T1 - Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor

AU - Ma, William Cheng Yu

AU - Su, Chun Jung

AU - Kao, Kuo Hsing

AU - Cho, Ta Chun

AU - Guo, Jing Qiang

AU - Wu, Cheng Jun

AU - Wu, Po Ying

AU - Hung, Jia Yuan

PY - 2023

Y1 - 2023

N2 - Thinning the thickness of the channel to the nanosheet structure effectively improves the control ability of the gate voltage to the channel potential to enhance the performance of the device and become the development direction of the device. Still, the influence on reliability degradation is mostly not considered simultaneously. This work investigates the effect of channel thinning on polycrystalline-silicon thin film transistors using nanosheet channel structures on device performance and reliability and finds that the degradation of device reliability is more severe with the thinning of nanosheet channels. The results present a reliability issue for particular improvement in the future development of nanosheet structures.

AB - Thinning the thickness of the channel to the nanosheet structure effectively improves the control ability of the gate voltage to the channel potential to enhance the performance of the device and become the development direction of the device. Still, the influence on reliability degradation is mostly not considered simultaneously. This work investigates the effect of channel thinning on polycrystalline-silicon thin film transistors using nanosheet channel structures on device performance and reliability and finds that the degradation of device reliability is more severe with the thinning of nanosheet channels. The results present a reliability issue for particular improvement in the future development of nanosheet structures.

UR - https://www.scopus.com/pages/publications/85175246438

M3 - 会议稿件

AN - SCOPUS:85175246438

T3 - 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings

SP - 126

EP - 128

BT - 30th International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023

Y2 - 4 July 2023 through 7 July 2023

ER -

Ma WCY, Su CJ, Kao KH, Cho TC, Guo JQ, Wu CJ 等. Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor. 於 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. p. 126-128. (30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings).

Insights of Nanosheet Channel Thickness on Reliability Degradation of Thin-Film Transistor

摘要

出版系列

Conference

文獻附註

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指紋

引用此