Interface properties and reliability of ultrathin oxynitride films grown on strained Si1-xGex substrates

S. K. Samanta; S. Chatterjee; S. Maikap; L. K. Bera; H. D. Banerjee; C. K. Maiti

doi:10.1063/1.1540224

Interface properties and reliability of ultrathin oxynitride films grown on strained Si_1-xGe_x substrates

S. K. Samanta, S. Chatterjee, S. Maikap, L. K. Bera, H. D. Banerjee, C. K. Maiti^*

^*此作品的通信作者

研究成果: 期刊稿件 › 文章 › 同行評審

11 引文斯高帕斯（Scopus）

摘要

The study of the role of nitrogen in improving the interface properties and the reliability of oxynitride/SiGe interfaces and the dielectric properties of oxynitride films using constraint theory was presented. Time-of-flight secondary ion mass spectrometry was used to study the nitrogen distribution in oxynitride films. It was found that dielectric films grown in N₂O ambient and annealed in N₂ had excellent electrical properties.

原文	英語
頁（從 - 到）	2464-2471
頁數	8
期刊	Journal of Applied Physics
卷	93
發行號	5
DOIs	https://doi.org/10.1063/1.1540224
出版狀態	已出版 - 01 03 2003
對外發佈	是

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AU - Banerjee, H. D.

AU - Maiti, C. K.

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Interface properties and reliability of ultrathin oxynitride films grown on strained Si1-xGex substrates

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Interface properties and reliability of ultrathin oxynitride films grown on strained Si_1-xGe_x substrates