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Intersublevel relaxation properties of self-assembled InAs/GaAs quantum dot heterostructures

  • Jiunn Chyi Lee*
  • , Yeu Jent Hu
  • , Ya Fen Wu
  • , Tzer En Nee
  • , Jen Cheng Wang
  • , Jia Hui Fang
  • *此作品的通信作者
  • Taipei City University of Science and Technology
  • Chang Gung University

研究成果: 圖書/報告稿件的類型會議稿件同行評審

摘要

We investigate the effect of carrier dynamics on the temperature dependence of photoluminescence spectra from InAs/GaAs quantum dot heterostructures with different dot size uniformity. Intersublevel relaxation lifetimes and carrier transferring mechanisms are simulated using a model based on carrier relaxing and thermal emitting of each discrete energy level in the quantum dot system. Calculated relaxation lifetimes are decreasing with temperature and have larger values for samples with lower size uniformity. In the quantitative discussion of carrier dynamics, the influence of thermal redistribution on carrier relaxing process of quantum dot system is demonstrated by our model.

原文英語
主出版物標題2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
頁面934-937
頁數4
DOIs
出版狀態已出版 - 2007
事件2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, 中國
持續時間: 02 08 200705 08 2007

出版系列

名字2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Conference

Conference2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
國家/地區中國
城市Hong Kong
期間02/08/0705/08/07

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