Investigation of InAlN/GaN Schottky barrier diode (SBD) on 6-inch SOI substrate

The low frequency noise and reverse recovery time characteristics of 6 inch InAlN/AlN/GaN Schottky barrier diode (SBD) were demonstrated and investigated on silicon-on-insulator (SOI) substrate for the first time. The Raman spectroscopy measurement indicates that the smaller epitaxy stress was obtained by adopting SOI wafer and X-ray diffraction measurements revealed that InAIN SBD on SOI achieves a flat surface and an abrupt hetero interface. Based on the DC and low frequency noise (LFN) measurement at various temperatures ranging between 300 and 450 K, the InAlN/GaN SBD on SOI design shows better forward current and reverse current, and the InAlN/GaN SBD on SOI design achieved a lower reverse recovery charge.