Investigation of temperature dependence in the dark current of InAs diode detectors

C. H. Kuan*, Ray Ming Lin, Shiang Feng Tang, Tai Ping Sun

*此作品的通信作者

研究成果: 會議稿件的類型論文同行評審

摘要

InAs diode detectors are good for approx. μm wavelength detection and promising to operate at high temperature (T). In order to decrease the dark current at high T, an attempt has been made to study the I-V characteristics of the PIN (S1066) and PN (S1135) diodes, and concluded the dominant current mechanics at various T.

原文英語
頁面255
頁數1
出版狀態已出版 - 1996
對外發佈
事件Proceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe - Hamburg, Ger
持續時間: 08 09 199613 09 1996

Conference

ConferenceProceedings of the 1996 Conference on Lasers and Electro-Optics Europe, CLEO/Europe
城市Hamburg, Ger
期間08/09/9613/09/96

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